Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures

被引：14

作者：

Zhang, Zuocheng ^{[1
]}

Feng, Xiao ^{[1
,2
]}

Guo, Minghua ^{[1
]}

Ou, Yunbo ^{[2
]}

Zhang, Jinsong ^{[1
]}

Li, Kang ^{[2
]}

Wang, Lili ^{[2
]}

Chen, Xi ^{[1
]}

Xue, Qikun ^{[1
,2
]}

Ma, Xucun ^{[2
]}

He, Ke ^{[2
]}

Wang, Yayu ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

topological insulators; heterostructures; surface states; transport;

D O I：

10.1002/pssr.201206391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report transport studies on Sb2Te3/Bi2Te3 topological insulator heterostructures grown by molecular beam epitaxy. Two devices with different Sb2Te3 thickness are fabricated and investigated. Under certain gate voltage, the Hall resistance exhibits strongly nonlinear behaviour and changes sign with increasing magnetic field, indicating the coexistence of electron- and hole-type charge carriers on the opposite surfaces of the heterostructure. Gate-tuned magnetoresistance measurements reveal the same phenomenon. This work paves the road for realizing the proposed exotic quantum phenomena that require opposite polarity of the surface Dirac fermions in topological insulator based structures. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：142 / 144

页数：3

共 10 条

[1] Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].

Chen, J. ;

Qin, H. J. ;

Yang, F. ;

Liu, J. ;

Guan, T. ;

Qu, F. M. ;

Zhang, G. H. ;

Shi, J. R. ;

Xie, X. C. ;

Yang, C. L. ;

Wu, K. H. ;

Li, Y. Q. ;

Lu, L. .

PHYSICAL REVIEW LETTERS, 2010, 105 (17)

[2] Molecular Beam Epitaxial Growth of Topological Insulators [J].

Chen, Xi ;

Ma, Xu-Cun ;

He, Ke ;

Jia, Jin-Feng ;

Xue, Qi-Kun .

ADVANCED MATERIALS, 2011, 23 (09) :1162-1165

[3] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[4]

Kong DS, 2011, NAT NANOTECHNOL, V6, P705, DOI [10.1038/nnano.2011.172, 10.1038/NNANO.2011.172]

[5] The quantum spin Hall effect and topological insulators [J].

Qi, Xiao-Liang ;

Zhang, Shou-Cheng .

PHYSICS TODAY, 2010, 63 (01) :33-38

[6] Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3 [J].

Qu, Dong-Xia ;

Hor, Y. S. ;

Xiong, Jun ;

Cava, R. J. ;

Ong, N. P. .

SCIENCE, 2010, 329 (5993) :821-824

[7] Exciton Condensation and Charge Fractionalization in a Topological Insulator Film [J].

Seradjeh, B. ;

Moore, J. E. ;

Franz, M. .

PHYSICAL REVIEW LETTERS, 2009, 103 (06)

[8] Topological p-n junction [J].

Wang, Jing ;

Chen, Xi ;

Zhu, Bang-Fen ;

Zhang, Shou-Cheng .

PHYSICAL REVIEW B, 2012, 85 (23)

[9] Spin Polarization and Transport of Surface States in the Topological Insulators Bi2Se3 and Bi2Te3 from First Principles [J].

Yazyev, Oleg V. ;

Moore, Joel E. ;

Louie, Steven G. .

PHYSICAL REVIEW LETTERS, 2010, 105 (26)

[10] Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators [J].

Zhang, Jinsong ;

Chang, Cui-Zu ;

Zhang, Zuocheng ;

Wen, Jing ;

Feng, Xiao ;

Li, Kang ;

Liu, Minhao ;

He, Ke ;

Wang, Lili ;

Chen, Xi ;

Xue, Qi-Kun ;

Ma, Xucun ;

Wang, Yayu .

NATURE COMMUNICATIONS, 2011, 2

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