Direct tomography imaging for inelastic X-ray scattering experiments at high pressure

被引:19
|
作者
Sahle, Ch. J. [1 ]
Rosa, A. D. [1 ]
Rossi, M. [1 ]
Cerantola, V. [1 ]
Spiekermann, G. [2 ]
Petitgirard, S. [3 ]
Jacobs, J. [1 ]
Huotari, S. [4 ]
Sala, M. Moretti [1 ]
Mirone, A. [1 ]
机构
[1] European Synchrotron Radiat Facil, 71 Ave Martyrs, F-38000 Grenoble, France
[2] Univ Potsdam, Inst Earth & Environm Sci, Potsdam, Germany
[3] Univ Bayreuth, Bayer Geoinst, Bayreuth, Germany
[4] Univ Helsinki, Dept Phys, POB 64, FI-00014 Helsinki, Finland
关键词
inelastic X-ray scattering; direct tomography; diamond anvil cell; high pressure; ELECTRONIC-STRUCTURE; IN-SITU; SPECTROSCOPY; EXCITATIONS; EXAFS; WATER; GLASS;
D O I
10.1107/S1600577516017100
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A method to separate the non-resonant inelastic X-ray scattering signal of a micro-metric sample contained inside a diamond anvil cell (DAC) from the signal originating from the high-pressure sample environment is described. Especially for high-pressure experiments, the parasitic signal originating from the diamond anvils, the gasket and/or the pressure medium can easily obscure the sample signal or even render the experiment impossible. Another severe complication for high-pressure non-resonant inelastic X-ray measurements, such as X-ray Raman scattering spectroscopy, can be the proximity of the desired sample edge energy to an absorption edge energy of elements constituting the DAC. It is shown that recording the scattered signal in a spatially resolved manner allows these problems to be overcome by separating the sample signal from the spurious scattering of the DAC without constraints on the solid angle of detection. Furthermore, simple machine learning algorithms facilitate finding the corresponding detector pixels that record the sample signal. The outlined experimental technique and data analysis approach are demonstrated by presenting spectra of the Si L-2,L-3-edge and O K-edge of compressed alpha-quartz. The spectra are of unprecedented quality and both the O K-edge and the Si L-2,L-3-edge clearly show the existence of a pressure-induced phase transition between 10 and 24 GPa.
引用
收藏
页码:269 / 275
页数:7
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