Design and Analysis of the Millimeter-Wave SPDT Switch for TDD Applications

被引:44
作者
Byeon, Chul Woo [1 ]
Park, Chul Soon [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
CMOS; millimeter wave; single-pole double-throw (SPDT) switch; 60; GHz; true time delay (TDD); GHZ;
D O I
10.1109/TMTT.2013.2271613
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a low-loss and high Tx-to-Rx isolation single-pole double-throw (SPDT) millimeter-wave switch for true time delay applications. The switch is designed based on matching-network and double-shunt transistors with quarter-wavelength transmission lines. The insertion loss and isolation characteristics of the switches are analyzed revealing that optimization of the transistor size with a matching-network switch on the receiver side and a double-shunt switch on the transmitter side can enhance the isolation performance with low loss. Implemented in 90-nm CMOS, the switch achieves a measured insertion loss and Tx-to-Rx isolation of 1.9 and 39 dB at 60 GHz, respectively. The input 1-dB gain compression point is 10 dBm at 60 GHz, and the return loss of the SPDT switch ports is greater than 10 dB at 48-67 GHz.
引用
收藏
页码:2858 / 2864
页数:7
相关论文
共 19 条
[1]   A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process [J].
Chang, Hong-Yeh ;
Chan, Ching-Yan .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (02) :82-84
[2]   A 50 to 94-GHz CMOS SPDT switch using traveling-wave concept [J].
Chao, Shih-Fong ;
Wang, Huei ;
Su, Chia-Yi ;
Chern, John G. J. .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (02) :130-132
[3]  
Glover I., 1998, DIGITAL COMMUNICATIO
[4]   Analysis and Design of 60-GHz SPDT Switch in 130-nm CMOS [J].
He, Jin ;
Xiong, Yong-Zhong ;
Zhang, Yue Ping .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (10) :3113-3119
[5]   Ultra-compact high-linearity high-power fully integrated DC-20-GHz 0.1.8-μm CMOS T/R switch [J].
Jin, Yalin ;
Nguyen, Cam .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (01) :30-36
[6]  
Jri Lee, 2009, 2009 IEEE International Solid-State Circuits Conference (ISSCC 2009), P316, DOI 10.1109/ISSCC.2009.4977435
[7]   On-wafer calibration techniques for giga-hertz CMOS measurements [J].
Kolding, TE .
ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1999, :105-110
[8]   A low-power high-gain LNA for the 60 GHz band in a 65 nm CMOS technology [J].
Kraemer, Michael ;
Dragomirescu, Daniela ;
Plana, Robert .
APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2009, :1156-1159
[9]   A 60-110 GHz Transmission-Line Integrated SPDT Switch in 90 nm CMOS Technology [J].
Lai, Ruei-Bin ;
Kuo, Jhe-Jia ;
Wang, Huei .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (02) :85-87
[10]   Millimeter-wave MMIC passive HEMT switches using traveling-wave concept [J].
Lin, KY ;
Tu, WH ;
Chen, PY ;
Chang, HY ;
Wang, H ;
Wu, RB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (08) :1798-1808