Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics

被引：30
作者：
Yu, Ying [1 ]
Shang, Xiang-Jun [1 ]
Li, Mi-Feng [1 ]
Zha, Guo-Wei [1 ]
Xu, Jian-Xing [1 ]
Wang, Li-Juan [1 ]
Wang, Guo-Wei [1 ]
Ni, Hai-Qiao [1 ]
Dou, Xiuming [1 ]
Sun, Baoquan [1 ]
Niu, Zhi-Chuan [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 20期
基金：
中国国家自然科学基金;
关键词：
EXCITON; SITU;
D O I：
10.1063/1.4807502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self assembled small InAs quantum dots (SQDs) were formed in various densities and environments using gradient InAs deposition on a non-rotating GaAs substrate. Two SQD environments (SQD I and SQD II) were characterized. SQD I featured SQDs surrounded by large QDs, and SQD II featured individual SQDs in the wetting layer (WL). Micro-photoluminescence of single QDs embedded in a cavity under various excitation powers and electric fields gave insight into carrier transport processes. Potential fluctuations of the WL in SQD II, induced by charge redistribution, show promise for charge-tunable QD devices; SQD I shows higher luminescence intensity as a single-photon source. (C) 2013 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 20 条
  • [1] Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot
    Berthelot, A.
    Favero, I.
    Cassabois, G.
    Voisin, C.
    Delalande, C.
    Roussignol, Ph.
    Ferreira, R.
    Gerard, J. M.
    [J]. NATURE PHYSICS, 2006, 2 (11) : 759 - 764
  • [2] Photocurrent and photoluminescence of a single self-assembled quantum dot in electric fields
    Findeis, F
    Baier, M
    Beham, E
    Zrenner, A
    Abstreiter, G
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2958 - 2960
  • [3] Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots -: art. no. 073307
    Finley, JJ
    Ashmore, AD
    Lemaître, A
    Mowbray, DJ
    Skolnick, MS
    Itskevich, IE
    Maksym, PA
    Hopkinson, M
    Krauss, TF
    [J]. PHYSICAL REVIEW B, 2001, 63 (07)
  • [4] Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots
    Fry, PW
    Finley, JJ
    Wilson, LR
    Lemaitre, A
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    Hill, G
    Clark, JC
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (26) : 4344 - 4346
  • [5] Garcia JM, 1998, APPL PHYS LETT, V72, P3172, DOI 10.1063/1.121583
  • [6] Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
    Ishikawa, T
    Nishimura, T
    Kohmoto, S
    Asakawa, K
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (02) : 167 - 169
  • [7] Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer
    Kazimierczuk, T.
    Golnik, A.
    Kossacki, P.
    Gaj, J. A.
    Wasilewski, Z. R.
    Babinski, A.
    [J]. PHYSICAL REVIEW B, 2011, 84 (11)
  • [8] Bias-controlled single-electron charging of a self-assembled quantum dot in a two-dimensional-electron-gas-based n-i-Schottky diode
    Mar, J. D.
    Xu, X. L.
    Baumberg, J. J.
    Brossard, F. S. F.
    Irvine, A. C.
    Stanley, C.
    Williams, D. A.
    [J]. PHYSICAL REVIEW B, 2011, 83 (07)
  • [9] A quantum dot single-photon turnstile device
    Michler, P
    Kiraz, A
    Becher, C
    Schoenfeld, WV
    Petroff, PM
    Zhang, LD
    Hu, E
    Imamoglu, A
    [J]. SCIENCE, 2000, 290 (5500) : 2282 - 2285
  • [10] Carrier transport in self-organized InAs/GaAs quantum-dot structures studied by single-dot spectroscopy
    Moskalenko, ES
    Larsson, M
    Schoenfeld, WV
    Petroff, PM
    Holtz, PO
    [J]. PHYSICAL REVIEW B, 2006, 73 (15)
12