Role of Dopants in Long-Range Charge Carrier Transport for p-Type and n-Type Graphene Transparent Conducting Thin Films

被引:84
作者
Bult, Justin B. [1 ]
Crisp, Ryan [1 ]
Perkins, Craig L. [1 ]
Blackburn, Jeffrey L. [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
graphene; transparent conductor; charged impurity; scattering; photovoltalcs; conductivity; mobility; transport; temperature-dependent; CHEMICAL-VAPOR-DEPOSITION; RAMAN-SPECTROSCOPY; LARGE-AREA; SCATTERING; ELECTRODE; PERFORMANCE; NETWORKS;
D O I
10.1021/nn402673z
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolayer to few-layer graphene thin films have several attractive properties such as high transparency, exceptional electronic transport, mechanical durability, and environmental stability, which are required in transparent conducting electrodes (TCs). The successful incorporation of graphene TCs into demanding applications such as thin film photovoltaics requires a detailed understanding of the factors controlling long-range charge transport. In this study, we use spectroscopic and electrical transport measurements to provide a self-consistent understanding of the macroscopic (centimeter, many-grain scale) transport properties of chemically doped p-type and n-type graphene TCs. We demonstrate the first large-area n-type graphene TCs through the use of hydrazine or polyethyleneimine as dopants. The n-type graphene TCs utilizing PEI, either as the sole dopant or as an overcoat, have good stability in air compared to TCs only doped with hydrazine. We demonstrate a shift in Fermi energy of well over 1 V between the n- and p-type graphene TCs and a sheet resistance of similar to 50 Omega/sq at 89% visible transmittance. The carrier density is increased by 2 orders of magnitude in heavily doped graphene TCs, while the mobility is reduced by a factor of similar to 7 due to charged impurity scattering. Temperature-dependent measurements demonstrate that the molecular dopants also help to suppress processes associated with carrier localization that may limit the potential of intrinsic graphene TCs. These results suggest that properly doped graphene TCs may be well-suited as anodes or cathodes for a variety of opto-electronic applications.
引用
收藏
页码:7251 / 7261
页数:11
相关论文
共 46 条
[11]   Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].
Chen, Jian-Hao ;
Jang, Chaun ;
Xiao, Shudong ;
Ishigami, Masa ;
Fuhrer, Michael S. .
NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209
[12]   Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices [J].
Cheng, Zengguang ;
Zhou, Qiaoyu ;
Wang, Chenxuan ;
Li, Qiang ;
Wang, Chen ;
Fang, Ying .
NANO LETTERS, 2011, 11 (02) :767-771
[13]   Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].
Das, A. ;
Pisana, S. ;
Chakraborty, B. ;
Piscanec, S. ;
Saha, S. K. ;
Waghmare, U. V. ;
Novoselov, K. S. ;
Krishnamurthy, H. R. ;
Geim, A. K. ;
Ferrari, A. C. ;
Sood, A. K. .
NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215
[14]   Raman spectroscopy of graphene on different substrates and influence of defects [J].
Das, Anindya ;
Chakraborty, Biswanath ;
Sood, A. K. .
BULLETIN OF MATERIALS SCIENCE, 2008, 31 (03) :579-584
[15]   Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics [J].
De Arco, Lewis Gomez ;
Zhang, Yi ;
Schlenker, Cody W. ;
Ryu, Koungmin ;
Thompson, Mark E. ;
Zhou, Chongwu .
ACS NANO, 2010, 4 (05) :2865-2873
[16]   Substrate-limited electron dynamics in graphene [J].
Fratini, S. ;
Guinea, F. .
PHYSICAL REVIEW B, 2008, 77 (19)
[17]   Product or sum: comparative tests of Voigt, and product or sum of Gaussian and Lorentzian functions in the fitting of synthetic Voigt-based X-ray photoelectron spectra [J].
Hesse, R. ;
Streubel, P. ;
Szargan, R. .
SURFACE AND INTERFACE ANALYSIS, 2007, 39 (05) :381-391
[18]   Scalable Coating and Properties of Transparent, Flexible, Silver Nanowire Electrodes [J].
Hu, Liangbing ;
Kim, Han Sun ;
Lee, Jung-Yong ;
Peumans, Peter ;
Cui, Yi .
ACS NANO, 2010, 4 (05) :2955-2963
[19]   Prospects for Nanowire-Doped Polycrystalline Graphene Films for Ultratransparent, Highly Conductive Electrodes [J].
Jeong, Changwook ;
Nair, Pradeep ;
Khan, Mohammad ;
Lundstrom, Mark ;
Alam, Muhammad A. .
NANO LETTERS, 2011, 11 (11) :5020-5025
[20]   Tuning of a graphene-electrode work function to enhance the efficiency of organic bulk heterojunction photovoltaic cells with an inverted structure [J].
Jo, Gunho ;
Na, Seok-In ;
Oh, Seung-Hwan ;
Lee, Sangchul ;
Kim, Tae-Soo ;
Wang, Gunuk ;
Choe, Minhyeok ;
Park, Woojin ;
Yoon, Jongwon ;
Kim, Dong-Yu ;
Kahng, Yung Ho ;
Lee, Takhee .
APPLIED PHYSICS LETTERS, 2010, 97 (21)