Recent advances in alternative material photovoltaics

被引:59
作者
Hossain, M. I. [1 ,2 ]
Alharbi, F. H. [1 ,3 ]
机构
[1] Qatar Fdn, Qatar Environm & Energy Res Inst, Doha, Qatar
[2] Univ Brunei Darussalam, Dept Phys, Gadong Be 1410, Negara, Brunei
[3] King Abdulaziz City Sci & Technol, Riyadh, Saudi Arabia
关键词
Non-conventional solar cells; Third generation photovoltaics; Single junction solar cells; Thin films; Nanostructured solar cells; Power conversion efficiency; MOLECULAR-BEAM EPITAXY; ATOMIC LAYER DEPOSITION; BETA-FESI2; THIN-FILMS; SOLAR-CELLS; ELECTRICAL-PROPERTIES; PHOTOELECTROCHEMICAL PROPERTIES; OPTOELECTRONIC PROPERTIES; ELECTRONIC-STRUCTURE; OPTICAL-TRANSITIONS; PHOTO-ANODES;
D O I
10.1179/1753555712Y.0000000039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Alternative material photovoltaics (PVs) have started gaining more attention recently. Although the field is not new, it just started growing a few years ago. The PV market has been dominated by various silicon technologies, besides a few other popular thin films, such as CdTe, copper-indium-galium-selenide varieties and some III-V materials. This has been reflected in research as well. Successful developments of efficient solar cells using alternative absorbers will significantly enrich the PV industry and reduce the market gap with other energy sources. Hence, in this review, recent advances and trends to develop PVs using alternative materials are presented and discussed. The focus will be mainly on binary as well as environmentally friendly compounds and thin film devices. Nonetheless, some other more complex materials and structures will be briefly addressed.
引用
收藏
页码:88 / 97
页数:10
相关论文
共 181 条
[61]   Efficient Schottky-quantum-dot photovoltaics: The roles of depletion, drift, and diffusion [J].
Johnston, Keith W. ;
Pattantyus-Abraham, Andras G. ;
Clifford, Jason P. ;
Myrskog, Stefan H. ;
Hoogland, Sjoerd ;
Shukla, Harnik ;
Klem, Ethan J. D. ;
Levina, Larissa ;
Sargent, Edward H. .
APPLIED PHYSICS LETTERS, 2008, 92 (12)
[62]  
KAM KK, 1982, J PHYS CHEM-US, V86, P463, DOI 10.1021/j100393a010
[63]   FUNDAMENTAL ABSORPTION EDGES AND INDIRECT BAND-GAPS IN W1-XMOXSE2 (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) [J].
KAM, KK ;
CHANG, CL ;
LYNCH, DW .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (22) :4031-4040
[64]  
Kanel H. V., 1982, SOLID STATE COMMUN, V43
[65]   THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS [J].
KAUTEK, W ;
GERISCHER, H ;
TRIBUTSCH, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2471-2478
[66]   Morphological study of PLD grown CuO films on SrTiO3, sapphire, quartz and MgO substrates [J].
Kawwam, M. ;
Alharbi, F. ;
Aldwayyan, A. ;
Lebbou, K. .
APPLIED SURFACE SCIENCE, 2012, 258 (24) :9949-9953
[67]   PHOTOVOLTAIC EFFECT IN PHOTOCONDUCTORS [J].
KEATING, PN .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :564-&
[68]   Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide [J].
Kim, Jay Yu ;
George, Steven M. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (41) :17597-17603
[69]   MG DOPING AND ALLOYING IN ZN3P2 HETEROJUNCTION SOLAR CELLS [J].
Kimball, Gregory M. ;
Lewis, Nathan S. ;
Atwater, Harry A. .
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, :1039-1043
[70]   Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2 [J].
Kimball, Gregory M. ;
Mueller, Astrid M. ;
Lewis, Nathan S. ;
Atwater, Harry A. .
APPLIED PHYSICS LETTERS, 2009, 95 (11)