Independent-Double-Gate FinFET SRAM Technology

被引：2

作者：

Endo, Kazuhiko ^{[1
]}

Ouchi, Shin-ichi ^{[1
]}

Matsukawa, Takashi ^{[1
]}

Liu, Yongxun ^{[1
]}

Masahara, Meishoku ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2013年 / E96C卷 / 04期

关键词：

multi-gate devices; FinFET; SRAM; noise margin; FIELD-EFFECT TRANSISTORS; MATCHING PROPERTIES; VARIABILITY; DEVICES; CELL;

D O I：

10.1587/transele.E96.C.413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible V-th adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.

引用

页码：413 / 423

页数：11

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