Monte Carlo simulation of secondary electron images for real sample structures in scanning electron microscopy

被引:52
|
作者
Zhang, P.
Wang, H. Y.
Li, Y. G.
Mao, S. F.
Ding, Z. J. [1 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
secondary electron; scanning electron microscopy images; Monte Carlo; arbitrary complex structures; SCATTERING; CONTRAST; SPECTRA; SURFACE;
D O I
10.1002/sca.20288
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Monte Carlo simulation methods for the study of electron beam interaction with solids have been mostly concerned with specimens of simple geometry. In this article, we propose a simulation algorithm for treating arbitrary complex structures in a real sample. The method is based on a finite element triangular mesh modeling of sample geometry and a space subdivision for accelerating simulation. Simulation of secondary electron image in scanning electron microscopy has been performed for gold particles on a carbon substrate. Comparison of the simulation result with an experiment image confirms that this method is effective to model complex morphology of a real sample. SCANNING 34: 145150, 2012. (c) 2011 Wiley Periodicals, Inc.
引用
收藏
页码:145 / 150
页数:6
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