Analysis of minority carrier diffusion length in SiC toward high quality epitaxial growth

被引：13

作者：

Hatayama, T ^{[1
]}

Yano, H ^{[1
]}

Uraoka, Y ^{[1
]}

Fuyuki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 01期

关键词：

SiC; CVD; minority carrier diffusion length; EBIC;

D O I：

10.1016/j.mee.2005.10.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Homoepitaxy of 4H-SiC grown by a horizontal hot-wall chemical vapor deposition and the minority carrier diffusion length were studied. With the addition of HCl during the etching and the epitaxy, an optimum growth window on the (0 0 0 (1) over bar) C face became wide. Minority carrier diffusion length in SiC epilayers was evaluated by a line-scanning electron-beam-induced current method. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：30 / 33

页数：4

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