Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC

被引：67
|
作者：
Fan, Jiyang [1 ,2 ]
Li, Hongxia [3 ]
Wang, Jing [1 ]
Xiao, Min [1 ,4 ,5 ]
机构：
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China
[3] Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Jiangsu, Peoples R China
[4] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[5] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期
基金：
中国国家自然科学基金;
关键词：
SILICON-CARBIDE; TRANSFORMATION; LUMINESCENCE;
D O I：
10.1063/1.4755778
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the fabrication and photoluminescence properties of the colloidal SiC quantum dots (QDs) stemming, respectively, from diminishing different polytypes (3C, 6H, and 4H) of bulk SiC crystals using electrochemical method. The three types of obtained SiC QDs show unexpected quite-similar photoluminescence, photoluminescence excitation, and transient photoluminescence properties. This strange phenomenon is explained by using the polytypic transformations of the colloidal SiC QDs driven by ultrasonic waves. Our results will greatly deepen our understanding of the fundamental physics of nanoscale SiC. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755778]
引用
收藏
页数：5
相关论文
共 50 条
  • [41] 6H to 3C polytype transformation in silicon carbide
    Vlaskina, SI
    Shin, DH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (1AB): : L27 - L29
  • [42] High-resolution spectroscopy of Er3+ ions in 6H SiC
    Kozanecki, A
    Glukhanyuk, V
    Jantsch, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 105 (1-3): : 169 - 174
  • [43] EFFECT OF PRESSURE ON NEAR-INFRARED ABE PHOTOLUMINESCENCE SPECTRUM OF 6H SIC CRYSTAL
    NIILISK, A
    LAISAAR, A
    SLOBODYANYUK, AV
    SOLID STATE COMMUNICATIONS, 1995, 94 (01) : 71 - 74
  • [44] Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC
    Cinar, Kuebra
    Coskun, Cevdet
    Guer, Emre
    Aydogan, Sakir
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (01) : 87 - 90
  • [45] Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography
    Wierzchowski, W.
    Wieteska, K.
    Balcer, T.
    Malinowska, A.
    Graeff, W.
    Hofman, W.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2007, 42 (12) : 1359 - 1363
  • [46] Photoluminescence properties of N and B codoped fluorescent 4H-SiC and 6H-SiC single crystals
    Zhuo, Shi-Yi
    Liu, Xue-Chao
    Huang, Wei
    Xu, Ting-Xiang
    Han, Wei-Wei
    Yan, Cheng-Feng
    Shi, Er-Wei
    AIP ADVANCES, 2018, 8 (12):
  • [47] Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach
    Kang, Kyung-Han
    Eun, Taihee
    Jun, Myong-Chul
    Lee, Byeong-Joo
    JOURNAL OF CRYSTAL GROWTH, 2014, 389 : 120 - 133
  • [48] 8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?
    Robert, T.
    Juillaguet, S.
    Marinova, M.
    Chassagne, T.
    Tsiaoussis, I.
    Frangis, N.
    Polychroniadis, E. K.
    Camassel, J.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 339 - 342
  • [49] Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation
    Yin, Kaili
    Shi, Liping
    Ma, Xiaoliang
    Zhong, Yesheng
    Li, Mingwei
    He, Xiaodong
    NANOMATERIALS, 2023, 13 (15)
  • [50] Polarized Photoluminescence from Partial Dislocations in 4H-SiC
    Hirano, Rii
    Tajima, Michio
    Tsuchida, Hidekazu
    Itoh, Kohei M.
    Maeda, Koji
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 319 - +
12345