Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC

被引：70

作者：

Fan, Jiyang ^{[1
,2
]}

Li, Hongxia ^{[3
]}

Wang, Jing ^{[1
]}

Xiao, Min ^{[1
,4
,5
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[2] Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China

[3] Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Jiangsu, Peoples R China

[4] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[5] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期

基金：

中国国家自然科学基金;

关键词：

SILICON-CARBIDE; TRANSFORMATION; LUMINESCENCE;

D O I：

10.1063/1.4755778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and photoluminescence properties of the colloidal SiC quantum dots (QDs) stemming, respectively, from diminishing different polytypes (3C, 6H, and 4H) of bulk SiC crystals using electrochemical method. The three types of obtained SiC QDs show unexpected quite-similar photoluminescence, photoluminescence excitation, and transient photoluminescence properties. This strange phenomenon is explained by using the polytypic transformations of the colloidal SiC QDs driven by ultrasonic waves. Our results will greatly deepen our understanding of the fundamental physics of nanoscale SiC. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755778]

引用

页数：5

共 36 条

[1] Photoluminescence of 6H-SiC nanostructures fabricated by electrochemical etching [J].

Botsoa, J. ;

Bluet, J. M. ;

Lysenko, V. ;

Marty, O. ;

Barbier, D. ;

Guillot, G. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)

[2] The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering [J].

Boulle, A. ;

Aube, J. ;

Galben-Sandulache, I. G. ;

Chaussende, D. .

APPLIED PHYSICS LETTERS, 2009, 94 (20)

[3] SILICON-CARBIDE UV PHOTODIODES [J].

BROWN, DM ;

DOWNEY, ET ;

GHEZZO, M ;

KRETCHMER, JW ;

SAIA, RJ ;

LIU, YS ;

EDMOND, JA ;

GATI, G ;

PIMBLEY, JM ;

SCHNEIDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :325-333

[4]

Devaty RP, 1997, PHYS STATUS SOLIDI A, V162, P5, DOI 10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.0.CO

[5]

2-J

[6] Mechanism of enhancement in electromagnetic properties of MgB2 by nano SiC doping [J].

Dou, S. X. ;

Shcherbakova, O. ;

Yoeh, W. K. ;

Kim, J. H. ;

Soltanian, S. ;

Wang, X. L. ;

Senatore, C. ;

Flukiger, R. ;

Dhalle, M. ;

Husnjak, O. ;

Babic, E. .

PHYSICAL REVIEW LETTERS, 2007, 98 (09)

[7] Silicon Carbide as a Platform for Power Electronics [J].

Eddy, C. R., Jr. ;

Gaskill, D. K. .

SCIENCE, 2009, 324 (5933) :1398-1400

[8]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[9] Excitation and recombination photodynamics in colloidal cubic SiC nanocrystals [J].

Fan, J. Y. ;

Li, H. X. ;

Cui, W. N. ;

Dai, D. J. ;

Chu, P. K. .

APPLIED PHYSICS LETTERS, 2010, 97 (19)

[10] 3C-SiC nanocrystals as fluorescent biological labels [J].

Fan, Jiyang ;

Li, Hongxia ;

Iiang, Jiang ;

So, Leo K. Y. ;

Lam, Yun Wah ;

Chu, Paul K. .

SMALL, 2008, 4 (08) :1058-1062

← 1 2 3 4 →