Structural modification of chalcogenide glasses by gamma-irradiation studied with DBAL technique

被引：5
|
作者：
Kavetskyy, Taras [1 ]
Tsmots, Volodymyr [1 ]
Sausa, Ondrej [2 ]
Stepanov, Andrey L. [3 ,4 ]
机构：
[1] Drohobych Ivan Franko State Pedag Univ, 24 I Franko Str, UA-82100 Drogobych, Ukraine
[2] Slovak Acad Sci, Inst Phys, Bratislava 84511, Slovakia
[3] Russian Acad Sci, Kazan Phys Tech Inst, Kazan 420029, Russia
[4] Kazan Fed Univ, Kazan 420008, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12 | 2012年 / 9卷 / 12期
关键词：
chalcogenide glasses; defects; gamma-irradiation; Doppler broadening annihilation line; POSITRON-ANNIHILATION; SEMICONDUCTORS; DEFECTS;
D O I：
10.1002/pssc.201200252
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The original experimental results on the study of structural modification of chalcogenide glasses by degrees 60Co gamma-irradiation with energy of 1.25 MeV and dose of 2.41 MGy for As2S3, Ge15.8As21S63.2, Ge9.5As28.6S61.9 and Ge23.5As11.8S64.7 alloys using Doppler broadening of annihilation line (DBAL) technique are reported. The gamma-irradiation-induced effect is analyzed in terms of Doppler S and W annihilation parameters. In particular, the observed different slope of S- W plots for glassy (g-) As2S3 and g-Ge15.8As21S63.2 studied in the unirradiated and gamma-irradiated states indicates that the defect structure of these alloys in the radiation- modified state is different, obviously, as a result of various mechanisms of radiationinduced defect formation. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2420 / 2423
页数：4
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