Seebeck and magnetoresistive effects of al-doped ZnO thin films

被引：4
作者：
Li, L
Fang, L [1 ]
Liao, KJ
Fu, GZ
Yang, FF
Liu, GB
Zhang, RJ
Cao, CL
Chen, WM
机构：
[1] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
[2] Chongqing Commun Inst, Dept Phys, Chongqing 400035, Peoples R China
[3] Chongqing Univ, Dept Optoelect Engn, Chongqing 400044, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 01期
基金：
中国国家自然科学基金;
关键词：
magnetoresistive effect; seebeck effect; thermoelectromotive force; AZO thin films;
D O I：
10.1016/j.jcrysgro.2005.10.051
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The Seebeck and magnetoresistive effects of Al-doped ZnO(AZO) thin films were investigated. It shows that there is a striking Seebeck effect in the AZO thin films, both the thermoelectromotive and magnetothermoelectromotive forces increase linearly with increasing temperature difference. The magnetoresistive effect of AZO thin films is related to the magnetic field and the shape of AZO samples. The magnetoresistance increases linearly with the increase of magnetic field, and the magneto resistance of sample with Corbino disk structure is greater than that of rectangle sample. Owing to magnetoresistive effect, the thermoelectromotive force degrades under the magnetic field. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：101 / 104
页数：4
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