Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

被引：1

作者：

Althammer, Matthias ^{[1
,2
]}

Singh, Amit Vikam ^{[1
,3
]}

Keshavarz, Sahar ^{[1
,4
]}

Yurtisigi, Mehmet Kenan ^{[1
,4
]}

Mishra, Rohan ^{[5
,6
]}

Borisevich, Albina Y. ^{[6
]}

LeClair, Patrick ^{[1
,4
]}

Gupta, Arunava ^{[1
,3
]}

机构：

[1] Univ Alabama, MINT Ctr, Tuscaloosa, AL 35487 USA

[2] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany

[3] Univ Alabama, Dept Chem & Chem Engn, Tuscaloosa, AL 35487 USA

[4] Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA

[5] Washington Univ, Dept Mech Engn & Mat Sci, St Louis, MO 63130 USA

[6] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 23期

基金：

美国国家科学基金会;

关键词：

ROOM-TEMPERATURE; FILMS; PEROVSKITE; FIELDS;

D O I：

10.1063/1.4972103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We experimentally investigate the structural, magnetic, and electrical transport properties of La-0.67 Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. Published by AIP Publishing.

引用

页数：6

共 35 条

[1] Bai Z., 2012, SPIN, V2, DOI DOI 10.1142/S201032471230006X
[2] VISIBLE LIGHT PHOTOCATALYTIC REDUCTION OF WATER USING SrSnO3 SENSITIZED BY CuFeO2
Bellal, B.
Hadjarab, B.
Bouguelia, A.
Trari, M.
[J]. THEORETICAL AND EXPERIMENTAL CHEMISTRY, 2009, 45 (03) : 172 - 179
[3] Nanoscale multiphase separation at La2/3Ca1/3MnO3/SrTiO3 interfaces -: art. no. 067210
Bibes, M
Balcells, L
Valencia, S
Fontcuberta, J
Wojcik, M
Jedryka, E
Nadolski, S
[J]. PHYSICAL REVIEW LETTERS, 2001, 87 (06) : 67210 - 1
[4] Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
Bowen, M
Bibes, M
Barthélémy, A
Contour, JP
Anane, A
Lemaitre, Y
Fert, A
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (02) : 233 - 235
[5] Low B2 crystallization temperature and high tunnel magnetoresistance in Co2FeAl/MgO/Co-Fe magnetic tunnel junctions
Ebke, D.
Thomas, P.
Schebaum, O.
Schaefers, M.
Nissen, D.
Drewello, V.
Huetten, A.
Thomas, A.
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (08) : 996 - 998
[6] Temperature dependence of the interfacial spin polarization of La2/3Sr1/3MnO3 -: art. no. 052403
Garcia, V
Bibes, M
Barthélémy, A
Bowen, M
Jacquet, E
Contour, JP
Fert, A
[J]. PHYSICAL REVIEW B, 2004, 69 (05)
[7] Ferroelectric tunnel junctions for information storage and processing
Garcia, Vincent
Bibes, Manuel
[J]. NATURE COMMUNICATIONS, 2014, 5
[8] In situ study of emerging metallicity on ion-bombarded SrTiO3 surface
Gross, Heiko
Bansal, Namrata
Kim, Yong-Seung
Oh, Seongshik
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
[9] Quantitative measurement of displacement and strain fields from HREM micrographs
Hytch, MJ
Snoeck, E
Kilaas, R
[J]. ULTRAMICROSCOPY, 1998, 74 (03) : 131 - 146
[10] Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature
Ikeda, S.
Hayakawa, J.
Ashizawa, Y.
Lee, Y. M.
Miura, K.
Hasegawa, H.
Tsunoda, M.
Matsukura, F.
Ohno, H.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (08)

← 1 2 3 4 →