Phases of Ba adsorption on Si(100)-(2 x 1) studied by LEED and AES

被引:26
|
作者
Hu, XM
Peterson, CA
Sarid, D [1 ]
Yu, Z
Wang, J
Marshall, DS
Droopad, R
Hallmark, JA
Ooms, WJ
机构
[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
[2] Motorola Phoenix Corp, Res Labs, Tempe, AZ 85284 USA
关键词
Auger electron spectroscopy; barium; low energy electron diffraction (LEED); low index single crystal surfaces; metal-semiconductor interfaces; scanning tunneling microscopy; silicides; silicon; surface structure; morphology; roughness; and; topography;
D O I
10.1016/S0039-6028(99)00219-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Phase transitions of Ba adsorption on a clean Si(001)-(2 x 1) studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) are reported. The depositions of the Ba were performed with (a) the substrate held at room temperature followed by annealing at elevated temperatures, and (b) the substrate held at 900 degrees C. While confirming earlier established phases, the existence of 4 x streaks in the (3 x 2) + c(6 x 2) and (2 x 1) phases has been identified. Also found was a real-time phase transition from a (3 x 2) phase to a mixture of (3 x 2) and c(6 x 2) phases during sample cooling. Finally, it was found that AES of Ba;Si peak ratios exhibit plateaus in the phase vs. temperature diagram for the (3 x 2), (3 x 2)+c(6 x2), and (2 x 1)+4 x streak phases, indicating a temperature-dependent mechanism limiting the Pa coverage. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:69 / 74
页数:6
相关论文
共 50 条
  • [21] A tensor LEED determination of the structure and compositional profile of a Cu{100}-c(2x2)-Pt surface alloy
    AlShamaileh, E
    Younis, H
    Barnes, CJ
    Pussi, K
    Lindroos, M
    SURFACE SCIENCE, 2002, 515 (01) : 94 - 102
  • [22] LEED structure determination of the (100)-surface of a CoSi2 crystal and a CoSi2 film grown epitaxially on Si(100)
    Weiss, W
    Starke, U
    Heinz, K
    Rangelov, G
    Fauster, T
    Castro, GR
    SURFACE SCIENCE, 1996, 347 (1-2) : 117 - 127
  • [23] In, Sn dimers on Si(100)2x1 surface: ab initio calculations and STM experiments
    Magaud, L
    Pasturel, A
    Jure, L
    Mallet, P
    Veuillen, JY
    SURFACE SCIENCE, 2000, 454 : 489 - 493
  • [24] Ag adsorption on a single domain Si(001)2x1 surface studied by electron and photoelectron diffraction
    Shivaprasad, SM
    Abukawa, T
    Yeom, HW
    Nakamura, M
    Suzuki, S
    Sato, S
    Sakamoto, K
    Sakamoto, T
    Kono, S
    SURFACE SCIENCE, 1995, 344 (03) : L1245 - L1251
  • [25] Structural transformations at room temperature adsorption of In on Si(111)root 3x root 3-In surface: LEED-AES-STM study
    Saranin, AA
    Zotov, AV
    Numata, T
    Kubo, O
    Ignatovich, KV
    Lifshits, VG
    Katayama, M
    Oura, K
    SURFACE SCIENCE, 1997, 388 (1-3) : 299 - 307
  • [26] ADSORPTION OF BISMUTH ON SI(001) STUDIED BY AES, REELS AND MASS-SPECTROMETRY
    KOVAL, IF
    MELNIK, PV
    NAKHODKIN, NG
    PYATNITSKY, MY
    AFANASIEVA, TV
    SURFACE SCIENCE, 1995, 331 (pt A) : 585 - 589
  • [27] Initial stage of NO adsorption on Si(100)-(2 x 1) studied by synchrotron radiation photoemission and photodesorption
    Carbone, M
    Bobrov, K
    Comtet, G
    Dujardin, G
    Hellner, L
    SURFACE SCIENCE, 2000, 467 (1-3) : 49 - 57
  • [28] ADSORPTION OF ETHYLENE ON THE SI(100)-(2X1) SURFACE - COMMENT
    CRAIG, BI
    SURFACE SCIENCE, 1995, 329 (03) : 293 - 294
  • [29] ADSORPTION OF ETHYLENE ON THE SI(100)-(2X1) SURFACE - REPLY
    WIDDRA, W
    HUANG, C
    WEINBERG, WH
    SURFACE SCIENCE, 1995, 329 (03) : 295 - 296
  • [30] STM investigation of the initial adsorption stage of Bi on Si(100)-(2 x 1) and Ge(100)-(2 x 1) surfaces
    Bulavenko, SY
    Koval, IF
    Melnik, PV
    Nakhodkin, NG
    Zandvliet, HJW
    SURFACE SCIENCE, 2001, 482 : 370 - 375