Preparing and Ferroelectrical properties of PZT nanoparticle modified PZT thick film by alternately spinning technique

被引:0
作者
Yang Xiu-Ying [1 ]
Zhao Quan-Liang [2 ]
Zhang De-Qing [1 ]
Lu Ran [2 ]
Liu Hong-Mei [3 ]
Cao Mao-Sheng [2 ]
机构
[1] Qiqihar Univ, Sch Chem Engn, Qiqihar 161006, Peoples R China
[2] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[3] Heilongjiang Univ, Key Lab Integrated Circuit, Harbin 150080, Peoples R China
来源
NEW TRENDS IN MECHATRONICS AND MATERIALS ENGINEERING | 2012年 / 151卷
基金
中国国家自然科学基金;
关键词
PZT nanoparticle; Thick film; Ferroelectrical properties; Alternately spinning;
D O I
10.4028/www.scientific.net/AMM.151.226
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
The present work focused on the study of preparing processes and the ferroelectric properties of a crack-free and PZT nanoparticle modified PZT thick film by alternately spinning technique. With the increase of the annealing temperature, Pr increased and Ec changed inconspicuously. When the thickness of PZT thick film increased, Ec decreased but Pr increased. For the 4 mu m-thick film, Ec and Pr were 23 kV/cm and 60 mu C/cm2, respectively. The results also confirmed that the alternately spinning technique not only improved the film thickness, but also solved the membrane surface roughness problem of the thick film prepared by PZT 0-3 composite sol method.
引用
收藏
页码:226 / +
页数:2
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