Application of the Johnson criteria to graphene transistors FAST TRACK COMMUNICATION

被引:4
作者
Kelly, M. J. [1 ,2 ]
机构
[1] Victoria Univ Wellington, MacDiarmid Inst, Wellington 6140, New Zealand
[2] Univ Cambridge, CAPE, Dept Engn, Cambridge CB3 0FA, England
基金
英国工程与自然科学研究理事会;
关键词
Compendex;
D O I
10.1088/0268-1242/28/12/122001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications.
引用
收藏
页数:2
相关论文
共 13 条
  • [1] Carbon-based electronics
    Avouris, Phaedon
    Chen, Zhihong
    Perebeinos, Vasili
    [J]. NATURE NANOTECHNOLOGY, 2007, 2 (10) : 605 - 615
  • [2] Cooper Daniel R., 2012, ISRN Condensed Matter Physics, DOI 10.5402/2012/501686
  • [3] The invariance of characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge) (Bi)CMOS high-speed building blocks
    Dickson, Timothy O.
    Yau, Kenneth H. K.
    Chalvatzis, Theodoros
    Mangan, Alain M.
    Laskin, Ekaterina
    Beerkens, Rudy
    Westergaard, Paul
    Tazlauanu, Mihai
    Yang, Ming-Ta
    Voinigescu, Sorin P.
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (08) : 1830 - 1845
  • [4] Mobility and saturation velocity in graphene on SiO2
    Dorgan, Vincent E.
    Bae, Myung-Ho
    Pop, Eric
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (08)
  • [5] Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors
    Ishiwara, Hiroshi
    [J]. CURRENT APPLIED PHYSICS, 2009, 9 : S2 - S6
  • [6] JOHNSON EO, 1965, RCA REV, V26, P163
  • [7] 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
    Lin, Y. -M.
    Dimitrakopoulos, C.
    Jenkins, K. A.
    Farmer, D. B.
    Chiu, H. -Y.
    Grill, A.
    Avouris, Ph.
    [J]. SCIENCE, 2010, 327 (5966) : 662 - 662
  • [8] A roadmap for graphene
    Novoselov, K. S.
    Fal'ko, V. I.
    Colombo, L.
    Gellert, P. R.
    Schwab, M. G.
    Kim, K.
    [J]. NATURE, 2012, 490 (7419) : 192 - 200
  • [9] RISC maker
    Perry, TS
    [J]. IEEE SPECTRUM, 2002, 39 (11) : 33 - +
  • [10] Tunneling characteristics of graphene
    Shin, Young Jun
    Kalon, Gopinadhan
    Son, Jaesung
    Kwon, Jae Hyun
    Niu, Jing
    Bhatia, Charanjit S.
    Liang, Gengchiau
    Yang, Hyunsoo
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (25)