Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

被引：21

作者：

Lee, Jung-Chuan ^{[1
]}

Huang, Leng-Wei ^{[2
]}

Hung, Dung-Shing ^{[1
,3
]}

Chiang, Tung-Han ^{[4
]}

Huang, J. C. A. ^{[4
,5
]}

Liang, Jun-Zhi ^{[5
,6
]}

Lee, Shang-Fan ^{[1
,2
]}

机构：

[1] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[2] Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 11605, Taiwan

[3] Ming Chuan Univ, Dept Informat & Telecommun Engn, Taipei 111, Taiwan

[4] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan

[5] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[6] Fu Jen Catholic Univ, Dept Phys, Taipei 242, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

关键词：

DC voltage - Microwave excitations - N-type semiconductors - Permalloy films - Spin currents - Spin-pumping - ZnO layers - ZnO thin film;

D O I：

10.1063/1.4863750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered. (C) 2014 AIP Publishing LLC.

引用

页数：4

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