Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

被引：21
作者：
Lee, Jung-Chuan [1 ]
Huang, Leng-Wei [2 ]
Hung, Dung-Shing [1 ,3 ]
Chiang, Tung-Han [4 ]
Huang, J. C. A. [4 ,5 ]
Liang, Jun-Zhi [5 ,6 ]
Lee, Shang-Fan [1 ,2 ]
机构：
[1] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[2] Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 11605, Taiwan
[3] Ming Chuan Univ, Dept Informat & Telecommun Engn, Taipei 111, Taiwan
[4] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan
[5] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[6] Fu Jen Catholic Univ, Dept Phys, Taipei 242, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期
关键词：
Nickel alloys - Pumps - II-VI semiconductors - Inverse problems - Iron alloys - Wide band gap semiconductors - Crystal symmetry - Magnetic semiconductors - Spin Hall effect;
D O I：
10.1063/1.4863750
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 37 条
[1]   Spin transport and spin dephasing in zinc oxide [J].
Althammer, Matthias ;
Karrer-Mueller, Eva-Maria ;
Goennenwein, Sebastian T. B. ;
Opel, Matthias ;
Gross, Rudolf .
APPLIED PHYSICS LETTERS, 2012, 101 (08)
[2]  
Ando K, 2011, NAT MATER, V10, P655, DOI [10.1038/nmat3052, 10.1038/NMAT3052]
[3]   Inverse spin-Hall effect induced by spin pumping in metallic system [J].
Ando, K. ;
Takahashi, S. ;
Ieda, J. ;
Kajiwara, Y. ;
Nakayama, H. ;
Yoshino, T. ;
Harii, K. ;
Fujikawa, Y. ;
Matsuo, M. ;
Maekawa, S. ;
Saitoh, E. .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (10)
[4]   Optimum condition for spin-current generation from magnetization precession in thin film systems [J].
Ando, K. ;
Yoshino, T. ;
Saitoh, E. .
APPLIED PHYSICS LETTERS, 2009, 94 (15)
[5]   Electric manipulation of spin relaxation using the spin Hall effect [J].
Ando, K. ;
Takahashi, S. ;
Harii, K. ;
Sasage, K. ;
Ieda, J. ;
Maekawa, S. ;
Saitoh, E. .
PHYSICAL REVIEW LETTERS, 2008, 101 (03)
[6]   Observation of the inverse spin Hall effect in silicon [J].
Ando, Kazuya ;
Saitoh, Eiji .
NATURE COMMUNICATIONS, 2012, 3
[7]   Spin pumping and anisotropic magnetoresistance voltages in magnetic bilayers: Theory and experiment [J].
Azevedo, A. ;
Vilela-Leao, L. H. ;
Rodriguez-Suarez, R. L. ;
Santos, A. F. Lacerda ;
Rezende, S. M. .
PHYSICAL REVIEW B, 2011, 83 (14)
[8]   Distinguishing spin pumping from spin rectification in a Pt/Py bilayer through angle dependent line shape analysis [J].
Bai, Lihui ;
Feng, Z. ;
Hyde, P. ;
Ding, H. F. ;
Hu, C-M. .
APPLIED PHYSICS LETTERS, 2013, 102 (24)
[9]   Dominant factors limiting efficiency of optical spin detection in ZnO-based materials [J].
Chen, W. M. ;
Buyanova, I. A. ;
Murayama, A. ;
Furuta, T. ;
Oka, Y. ;
Norton, D. P. ;
Pearton, S. J. ;
Osinsky, A. ;
Dong, J. W. .
APPLIED PHYSICS LETTERS, 2008, 92 (09)
[10]  
Dubois S, 1999, PHYS REV B, V60, P477, DOI 10.1103/PhysRevB.60.477
1234