Magnetoresistive nanojunctions fabricated via focused ion beam implantation

被引：0
作者：
Stefanescu, E. [1 ]
Hong, J. [1 ]
Guduru, R. [1 ]
Lavrenov, A. [2 ]
Litvinov, D. [3 ]
Khizroev, S. [1 ]
机构：
[1] Florida Int Univ, Miami, FL 33199 USA
[2] Hitachi Res, San Jose, CA USA
[3] Univ Houston, Ctr Nanomagnet Syst, Houston, TX USA
来源：
JOURNAL OF NANOPARTICLE RESEARCH | 2013年 / 15卷 / 01期
基金：
美国国家科学基金会;
关键词：
Focused ion beam (FIB); Nanofabrication; Nanomagnetic transducers; Nanoscale devices; Magnetoresistive heads; Giant magnetoresistive heads; MR; GMR; Ion implantation; GIANT MAGNETORESISTANCE; MAGNETIC-PROPERTIES; HEADS;
D O I：
10.1007/s11051-012-1387-2
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Focused ion beam (FIB) is used to implant Ga+ ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 mu m to similar to 80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of similar to 10(3) ions/cm(2) at a 1-pA FIB current is sufficient to fully "de-activate'' magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation
    Kasai, M
    Yanagisawa, J
    Tanaka, H
    Hasegawa, S
    Asahi, H
    Gamo, K
    Akasaka, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2) : 240 - 243
  • [22] Focused Ion Beam nano-patterning from traditional applications to single ion implantation perspectives
    Gierak, Jacques
    NANOFABRICATION, 2014, 1 (01): : 35 - 52
  • [23] Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system
    Hada, T
    Miyamoto, H
    Yanagisawa, J
    Wakaya, F
    Yuba, Y
    Gamo, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 751 - 755
  • [24] Focused ion beam implantation of Ga in InP studied by SIMS and dynamic computer simulations
    Gnaser, Hubert
    SURFACE AND INTERFACE ANALYSIS, 2011, 43 (1-2) : 28 - 31
  • [25] Doping of TIPS-pentacene via Focused Ion Beam (FIB) exposure
    Saive, Rebecca
    Mueller, Lars
    Mankel, Eric
    Kowalsky, Wolfgang
    Kroeger, Michael
    ORGANIC ELECTRONICS, 2013, 14 (06) : 1570 - 1576
  • [26] Superconducting W-C nanopillars fabricated by Ga+ focused ion beam induced deposition
    Orus, Pablo
    Sigloch, Fabian
    Sangiao, Soraya
    De Teresa, Jose Maria
    JOURNAL OF SOLID STATE CHEMISTRY, 2022, 315
  • [27] Microstructural evolution of a focused ion beam fabricated Mg nanopillar at high temperatures: Defect annihilation and sublimation
    Jeong, Jiwon
    Lee, Subin
    Kim, Youbin
    Han, Seung Min
    Kiener, Daniel
    Kang, Youn-Bae
    Oh, Sang Ho
    SCRIPTA MATERIALIA, 2014, 86 : 44 - 47
  • [28] Developments in focused ion beam metrology
    Salen, JA
    Athas, GJ
    Barnes, D
    Bassom, NJ
    Yansen, DE
    PROCESS, EQUIPMENT, AND MATERIALS CONTROL IN INTEGRATED CIRCUIT MANUFACTURING IV, 1998, 3507 : 216 - 224
  • [29] InAs Diodes Fabricated Using Be Ion Implantation
    White, Benjamin S.
    Sandall, Ian C.
    David, John P. R.
    Tan, Chee Hing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (09) : 2928 - 2932
  • [30] Thickness Modulated Niobium Nanoconstrictions by Focused Ion Beam and Anodization
    De Leo, Natascia
    Fretto, Matteo
    Lacquaniti, Vincenzo
    Cassiago, Cristina
    D'Ortenzi, Luca
    Boarino, Luca
    Maggi, Sabino
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2016, 26 (03)
12345