Magnetoresistive nanojunctions fabricated via focused ion beam implantation

被引：0

作者：

Stefanescu, E. ^{[1
]}

Hong, J. ^{[1
]}

Guduru, R. ^{[1
]}

Lavrenov, A. ^{[2
]}

Litvinov, D. ^{[3
]}

Khizroev, S. ^{[1
]}

机构：

[1] Florida Int Univ, Miami, FL 33199 USA

[2] Hitachi Res, San Jose, CA USA

[3] Univ Houston, Ctr Nanomagnet Syst, Houston, TX USA

来源：

JOURNAL OF NANOPARTICLE RESEARCH | 2013年 / 15卷 / 01期

基金：

美国国家科学基金会;

关键词：

Focused ion beam (FIB); Nanofabrication; Nanomagnetic transducers; Nanoscale devices; Magnetoresistive heads; Giant magnetoresistive heads; MR; GMR; Ion implantation; GIANT MAGNETORESISTANCE; MAGNETIC-PROPERTIES; HEADS;

D O I：

10.1007/s11051-012-1387-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Focused ion beam (FIB) is used to implant Ga+ ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 mu m to similar to 80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of similar to 10(3) ions/cm(2) at a 1-pA FIB current is sufficient to fully "de-activate'' magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.

引用

页数：4

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