Magnetoresistive nanojunctions fabricated via focused ion beam implantation

被引：0
|
作者：
Stefanescu, E. [1 ]
Hong, J. [1 ]
Guduru, R. [1 ]
Lavrenov, A. [2 ]
Litvinov, D. [3 ]
Khizroev, S. [1 ]
机构：
[1] Florida Int Univ, Miami, FL 33199 USA
[2] Hitachi Res, San Jose, CA USA
[3] Univ Houston, Ctr Nanomagnet Syst, Houston, TX USA
来源：
JOURNAL OF NANOPARTICLE RESEARCH | 2013年 / 15卷 / 01期
基金：
美国国家科学基金会;
关键词：
Focused ion beam (FIB); Nanofabrication; Nanomagnetic transducers; Nanoscale devices; Magnetoresistive heads; Giant magnetoresistive heads; MR; GMR; Ion implantation; GIANT MAGNETORESISTANCE; MAGNETIC-PROPERTIES; HEADS;
D O I：
10.1007/s11051-012-1387-2
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Focused ion beam (FIB) is used to implant Ga+ ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 mu m to similar to 80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of similar to 10(3) ions/cm(2) at a 1-pA FIB current is sufficient to fully "de-activate'' magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.
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页数：4
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