Bipolar one diode-one resistor integration for high-density resistive memory applications

被引：50
作者：
Li, Yingtao [1 ,2 ]
Lv, Hangbing [1 ]
Liu, Qi [1 ]
Long, Shibing [1 ]
Wang, Ming [1 ]
Xie, Hongwei [1 ,2 ]
Zhang, Kangwei [1 ]
Huo, Zongliang [1 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China
[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
NANOSCALE | 2013年 / 5卷 / 11期
关键词：
CONDUCTIVE FILAMENTS; NANOCROSSBAR; STORAGE; DEVICE; LAYER; ARRAY;
D O I：
10.1039/c3nr33370a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.
引用
收藏
页码：4785 / 4789
页数：5
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