Monolithic integration of near-infrared Ge photodetectors with Si complementary metal-oxide-semiconductor readout electronics

被引：33
作者：
Masini, G
Cencelli, V
Colace, L
De Notaristefani, F
Assanto, G
机构：
[1] Univ Roma Tre, INFM Roma 3, I-00146 Rome, Italy
[2] Univ Roma Tre, Dept Elect Engn, I-00146 Rome, Italy
[3] INFN Roma 3, I-00146 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期
关键词：
Photodetectors - Transistors - Temperature - Infrared devices - Metals - MOS devices - Oxide semiconductors - Silicon compounds - CMOS integrated circuits - Dielectric devices - Heterojunctions;
D O I：
10.1063/1.1477267
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using a low-temperature technology for polycrystalline Ge deposition, we report on the monolithic integration of an array of near-infrared Ge photodiodes on Si complementary metal-oxide-semiconductor (CMOS) electronics. The integrated microsystem consists of a linear array of 120x120 mum(2) pixels, an analog CMOS multiplexer and a transimpedance amplifier. The resulting photoresponse covers the near-infrared up to 1.6 mum. (C) 2002 American Institute of Physics.
引用
收藏
页码：3268 / 3270
页数：3
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