Microstructure and energy-storage performance of BaO-B2O3-SiO2 glass added (Na0.5Bi0.5)TiO3 thick films

被引：19
作者：
Zhang, Le [1 ]
Hao, Xihong [1 ]
Zhang, Liwen [1 ]
Yang, Jichun [1 ]
An, Shengli [1 ]
机构：
[1] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 10期
基金：
中国国家自然科学基金;
关键词：
DENSITY;
D O I：
10.1007/s10854-013-1325-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
(Na0.5Bi0.5)TiO3 lead-free thick films were successfully fabricated on alumina substrates via a screen printing method with 0-10 wt% BaO-B2O3-SiO2 glass addition. Microstructure, dielectric properties and energy-storage performance of the thick films were systematically investigated. The results show that the denser thick films were obtained by addition of glass. Thus, the breakdown strength, the energy-storage density and efficiency were greatly improved. The maximum recoverable energy-storage density and efficiency of sample with 1 wt% glass were 2.0 J/cm(3) and 44.1 %, respectively. Meanwhile, a low leakage current density of about 10(-6) A/cm(2) was obtained for all samples at 100 kV/cm.
引用
收藏
页码：3830 / 3835
页数：6
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