Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

被引：9

作者：

Eadi, Sunil Babu ^{[1
]}

Lee, Jeong Chan ^{[1
]}

Song, Hyeong-Sub ^{[1
]}

Oh, Jungwoo ^{[2
]}

Lee, Ga-Won ^{[1
]}

Lee, Hi-Deok ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon, South Korea

[2] Yonsei Univ, Yonsei Inst Convergence, Sch Integrated Technol, Incheon, South Korea

来源：

SCIENTIFIC REPORTS | 2020年 / 10卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

THERMAL-STABILITY; NICKEL; EVOLUTION; KINETICS; GERMANIDES; FILMS; GATE; NIGE;

D O I：

10.1038/s41598-020-61011-4

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 x 10(-8) Omega.cm(2), which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 x 10(-6) Omega.cm(2). The current-voltage characteristics were studied at a temperature range of -110 similar to 25 degrees C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

引用

页数：9

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