Impact of the annealing temperature on the optical performances of Er-doped Si-rich Silica systems

被引：11

作者：

Cueff, S. ^{[1
]}

Labbe, C. ^{[1
]}

Cardin, J. ^{[1
]}

Rizk, R. ^{[1
]}

机构：

[1] CEA, CNRS, Ctr Rech Ions Mat & Photon CIMAP, ENSICAEN,IRAMIS,UCBN, F-14050 Caen, France

来源：

SEMICONDUCTOR NANOSTRUCTURES TOWARDS ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS II (SYMPOSIUM K, E-MRS 2009 SPRING MEETING) | 2009年 / 6卷

关键词：

ENERGY-TRANSFER; NANOCLUSTERS;

D O I：

10.1088/1757-899X/6/1/012021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Series of Er-doped Si-rich silicon oxide (SRSO:Er) layers were grown by magnetron sputtering at different temperatures from ambient to 500 degrees C and then annealed between 600 degrees C and 1100 degrees C. They were characterized by spectroscopic and time-resolved photoluminescence (PL) measurements. Significant PL was detected at 1533 nm from the as-grown samples at T >= 300 degrees C excited by a non-resonant wavelength (476 nm), hence indicating the formation of Si-based sensitizers during the growth process. The PL intensity and the decay lifetime of Er3+ ions were both greatly increased with the annealing temperature. An optimum temperature of annealing is obtained at 800 degrees C, which is expected to favor the formation of very dense and small sensitizers. The fraction of Er coupled to sensitizers was found nearly 6-7 times higher than that reported so far in the literature.

引用

页数：4

共 13 条

[1] Influence of the annealing temperature on the photoluminescence of Er-doped SiO thin films [J].

Adeola, G. Wora ;

Rinnert, H. ;

Miska, P. ;

Vergnat, M. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)

[2] Refractive index dependence of the absorption and emission cross sections at 1.54 μm of Er3+ coupled to Si nanoclusters [J].

Daldosso, N ;

Navarro-Urrios, D ;

Melchiorri, M ;

Pavesi, L ;

Sada, C ;

Gourbilleau, F ;

Rizk, R .

APPLIED PHYSICS LETTERS, 2006, 88 (16)

[3] 1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ [J].

Fujii, M ;

Yoshida, M ;

Kanzawa, Y ;

Hayashi, S ;

Yamamoto, K .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1198-1200

[4] Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters [J].

Garrido, B. ;

Garcia, C. ;

Seo, S. -Y. ;

Pellegrino, P. ;

Navarro-Urrios, D. ;

Daldosso, N. ;

Pavesi, L. ;

Gourbilleau, F. ;

Rizk, R. .

PHYSICAL REVIEW B, 2007, 76 (24)

[5] Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2:: size control, optimum Er-Si coupling and interaction distance monitoring [J].

Gourbilleau, F ;

Madelon, R ;

Dufour, C ;

Rizk, R .

OPTICAL MATERIALS, 2005, 27 (05) :868-875

[6]

Hijazi K, 2009, J LUM IN PRESS

[7] Modification of the Er3+ radiative lifetime from proximity to silicon nanoclusters in silicon-rich silicon oxide [J].

Horak, Peter ;

Loh, Wei H. ;

Kenyon, Anthony J. .

OPTICS EXPRESS, 2009, 17 (02) :906-911

[8] Influence of the annealing treatments on the luminescence properties of SiO/SiO2 multilayers [J].

Jambois, O. ;

Rinnert, H. ;

Devaux, X. ;

Vergnat, M. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)

[9] OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS [J].

KENYON, AJ ;

TRWOGA, PF ;

FEDERIGHI, M ;

PITT, CW .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (21) :L319-L324

[10] Er site in Er-implanted Si nanoclusters embedded in SiO2 [J].

Maurizio, C. ;

Iacona, F. ;

D'Acapito, F. ;

Franzo, G. ;

Priolo, F. .

PHYSICAL REVIEW B, 2006, 74 (20)

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