Analysis of device characteristics for InGaN semiconductor lasers

被引：14

作者：

Hatakoshi, G ^{[1
]}

Onomura, M ^{[1
]}

Saito, S ^{[1
]}

Sasanuma, K ^{[1
]}

Itaya, K ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 3B期

关键词：

numerical analysis; device simulation; semiconductor laser; InGaN; carrier overflow; transverse mode;

D O I：

10.1143/JJAP.38.1780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier overflow and perpendicular transverse mode in InGaN multi-quantum-well lasers have been analyzed by numerical calculation. A high acceptor concentration for the p-type cladding layer and the reduction of the active layer volume have a large effect on the reduction of carrier overflow. Anti-guide-like behavior of the waveguide mode is formed in InGaN laser structures where the cladding layers have insufficient thickness. The layer structure should be designed so ns to reduce the carrier overflow and suppress the anti-guide-like mode.

引用

页码：1780 / 1785

页数：6

共 22 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[3] DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :434-442

[4] Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC [J].

Bulman, GE ;

Doverspike, K ;

Sheppard, ST ;

Weeks, TW ;

Kong, HS ;

Dieringer, HM ;

Edmond, JA ;

Brown, JD ;

Swindell, JT ;

Schetzina, JF .

ELECTRONICS LETTERS, 1997, 33 (18) :1556-1557

[5]

DOMEN K, 1998, MRS INTERNET J NITRI, V3

[6] HIGH-POWER INGAALP LASER-DIODES FOR HIGH-DENSITY OPTICAL-RECORDING [J].

HATAKOSHI, G ;

NITTA, K ;

ITAYA, K ;

NISHIKAWA, Y ;

ISHIKAWA, M ;

OKAJIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2B) :501-507

[7]

Hatakoshi G., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE71, P923

[8] Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure [J].

Hofstetter, D ;

Bour, DP ;

Thornton, RL ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1650-1652

[9] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[10] OPTICAL GAIN CALCULATION OF WURTZITE GAN/ALGAN QUANTUM-WELL LASER [J].

KAMIYAMA, S ;

OHNAKA, K ;

SUZUKI, M ;

UENOYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A) :L821-L823

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