Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon

被引：6
作者：
Noghabi, O. R. Asadi [1 ,2 ]
M'Hamdi, M. [1 ,2 ]
Jomaa, M. [2 ]
机构：
[1] Norwegian Univ Sci & Technol, N-7465 Trondheim, Norway
[2] SINTEF Mat Technol, NO-0315 Oslo, Norway
来源：
MEASUREMENT SCIENCE AND TECHNOLOGY | 2013年 / 24卷 / 01期
关键词：
numerical simulation; Czochralski process; thermophysical properties; emissivity; thermal conductivity; NUMERICAL-SIMULATION; GLOBAL SIMULATION; THERMOPHYSICAL PROPERTIES; MELT CONVECTION; SINGLE-CRYSTALS; BULK DEFECTS; SI; TRANSPORT; DESIGN; FLOW;
D O I：
10.1088/0957-0233/24/1/015601
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reliability of the numerical simulation results strongly depends on the input data, in particular on the thermo-physical properties of the furnace components, e. g. graphite thermal conductivity and steel surface emissivity. Uncertainties are always involved in the measurement of these parameters. A set of global 2D simulations has been carried out in order to investigate the impact of each property on the growth conditions in Czochralski silicon growth furnaces. The results indicate that steel emissivity and felt conductivity have significant impact on the calculated thermal field and energy consumption.
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页数：9
相关论文
共 27 条
[1]  
Andrea V, 1991, J CRYST GROWTH, V112, P699
[2]   RADIATIVE HEAT-EXCHANGE IN CZOCHRALSKI CRYSTAL-GROWTH [J].
ATHERTON, LJ ;
DERBY, JJ ;
BROWN, RA .
JOURNAL OF CRYSTAL GROWTH, 1987, 84 (01) :57-78
[3]   Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results [J].
Dornberger, E ;
Tomzig, E ;
Seidl, A ;
Schmitt, S ;
Leister, HJ ;
Schmitt, C ;
Muller, G .
JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) :461-467
[4]   GLOBAL MODELING OF HEAT-TRANSFER IN CRYSTAL-GROWTH FURNACES [J].
DUPRET, F ;
NICODEME, P ;
RYCKMANS, Y ;
WOUTERS, P ;
CROCHET, MJ .
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 1990, 33 (09) :1849-1871
[5]   Numerical simulation of combined flow in Czochralski crystal growth [J].
Geng, X ;
Wu, XB ;
Guo, ZY .
JOURNAL OF CRYSTAL GROWTH, 1997, 179 (1-2) :309-319
[6]   On the hot-zone design of Czochralski silicon growth for photovoltaic applications [J].
Huang, LY ;
Lee, PC ;
Hsieh, CK ;
Hsu, WC ;
Lan, CW .
JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) :433-443
[7]   OXYGEN SOLUBILITIES IN SI MELT - INFLUENCE OF SB ADDITION [J].
HUANG, XM ;
TERASHIMA, K ;
SASAKI, H ;
TOKIZAKI, E ;
KIMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3671-3674
[8]   A numerical simulation study for the Czochralski growth process of Si under magnetic field [J].
Jana, S. ;
Dost, S. ;
Kumar, V. ;
Durst, F. .
INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE, 2006, 44 (8-9) :554-573
[9]   Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations [J].
Kalaev, VV ;
Lukanin, DP ;
Zabelin, VA ;
Makarov, YN ;
Virbulis, J ;
Dornberger, E ;
von Ammon, W .
JOURNAL OF CRYSTAL GROWTH, 2003, 250 (1-2) :203-208
[10]   Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection [J].
Kalaev, VV ;
Lukanin, DP ;
Zabelin, VA ;
Makarov, YN ;
Virbulis, J ;
Dornberger, E ;
von Ammon, W .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (4-5) :369-373
123