Quantitative Determination of How Growth Conditions Affect the 3D Composition of InGaAs Nanowires

被引：1

作者：

Qu, Jiangtao ^{[1
,2
]}

Chen, Hansheng ^{[1
,2
]}

Khan, Mansoor ^{[1
,2
]}

Yun, Fan ^{[1
,2
]}

Cui, Xiangyuan ^{[3
]}

Ringer, Simon P. ^{[3
]}

Cairney, Julie M. ^{[3
]}

Zheng, Rongkun ^{[1
,2
]}

机构：

[1] Sch Phys, Camperdown, NSW, Australia

[2] Univ Sydney, Australian Inst Nanoscale Sci & Technol, Sydney, NSW 2006, Australia

[3] Univ Sydney, Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

来源：

MICROSCOPY AND MICROANALYSIS | 2019年 / 25卷 / 02期

基金：

澳大利亚研究理事会;

关键词：

atom probe tomography; Au catalyst; core-shell structure; epitaxy growth; InGaAs nanowires; EPITAXIAL-GROWTH; MECHANISM; GAAS; TOMOGRAPHY; MICROSCOPY; DENSITY; SHAPE;

D O I：

10.1017/S1431927619000114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Covering a broad optical spectrum, ternary InxGa1-xAs nanowires, grown by bottom-up methods, have been receiving increasing attention due to the tunability of the bandgap via In composition modulation. However, inadequate knowledge about the correlation between growth and properties restricts our ability to take advantage of this phenomenon for optoelectronic applications. Here, three different InGaAs nanowires were grown under different experimental conditions and atom probe tomography was used to quantify their composition, allowing the direct observation of the nanowire composition associated with the different growth conditions.

引用

页码：524 / 531

页数：8

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