A wideband CMOS transconductance-transimpedance amplifier

被引：0
|
作者：
Huang, HY
Wang, BR
Lee, HF
机构：
来源：
Proceedings of the 46th IEEE International Midwest Symposium on Circuits & Systems, Vols 1-3 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, a CMOS transconductance-transimpedance wideband amplifier is proposed. Using a high-speed current mirror, the amplifier has more reliable and stable performance compared to the original configuration. A test chip is fabricated using 0.35um CMOS 1P4M process. The test result shows that the amplifier has a 130MHz unit-gain bandwidth and a 8.6dB voltage gain at 10pF output load.
引用
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页码：153 / 156
页数：4
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