Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

被引：13

作者：

Mercier, Frederic ^{[1
]}

Nishizawa, Shin-ichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 362卷

关键词：

Computer simulation; Magnetic fields; Mass transfer; Growth from high temperature solutions; Semiconducting materials; SILICON;

D O I：

10.1016/j.jcrysgro.2011.11.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present numerical simulations of the high temperature solution growth (HTSG) of silicon carbide (SiC) crystals. From a global simulation model, we investigate the influence of rotating magnetic fields (RMFs) and traveling magnetic fields (TMFs) on the crystal growth rate. The results reveal that heat and mass transfers are affected by magnetic fields. We show that direction of the solute flux must be controlled to increase the growth rate. For example, in presence of TMFs directed downwards the growth rate increases up to three times compared with the pure thermal HTSG. The proposed HTSG system coupled with magnetic fields has the same growth rate possibility as in the sublimation technique. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：99 / 102

页数：4

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