Improvement of the Electrical Properties of Al-Based Reflective Electrode on P-Type GaN for Flip-Chip Light-Emitting Diodes

被引：0

作者：

Leem, Dong-Seok ^{[1
]}

Lee, Takhee ^{[1
]}

Seong, Tae-Yeon ^{[2
]}

机构：

[1] Gwangju Inst Sci & Technol GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2005年 / 1卷 / 02期

关键词：

ohmic contacts; GaN; TiN barrier layer; flip-chip light-emitting diodes; Al reflector;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the formation of Ag/TiNx/Al contacts to p-type GaN for flip-chip light-emitting diodes (LEDs). The Ag/TiNx/Al contact exhibits linear I-V behavior with a specific contact resistance of 4.4 x 10(-3) Omega cm(2) after annealing at 430 degrees C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nano-dots when annealed. It is also demonstrated that the TiNx barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiNx/Al contacts and are compared with those made with annealed Ni/Au/Al contacts.

引用

页码：115 / 119

页数：5

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