Some physical investigations on In-doped ZnO films prepared by RF magnetron sputtering using powder compacted target

Indium-doped zinc oxide thin films (IZO) at different percentages (2-5 wt%) were deposited on p-Si(100) and glass substrates at room temperature using powder compacted target. The effect of In concentration on the structural, optical and electrical properties of the IZO thin films were investigated. XRD analysis revealed that all films consist of single phase ZnO and were well crystallised in wurtzite phase with the crystallites preferentially oriented towards (002) direction parallel to c-axis. Doping by Indium resulted a noticeably change in the optical band gap energy. Hall effect measurements show that all films present an n-type conduction. The lowest obtained resistivity of the IZO films is 5.35 x 10(-3) Omega cm. From the I-V and C-V characteristics, we investigated the ideality factor, the donor concentrations, the barrier height and the series resistance of the ZnO/p-Si heterojunction. Finally, all results have been discussed in terms of the Indium doping concentration.