Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn1-xGexTe

被引:183
作者
Banik, Ananya [1 ]
Ghosh, Tanmoy [1 ]
Arora, Raagya [2 ]
Dutta, Moinak [1 ]
Pandey, Juhi [3 ]
Acharya, Somnath [3 ]
Soni, Ajay [3 ]
Waghmare, Umesh V. [2 ,4 ]
Biswas, Kanishka [1 ,4 ]
机构
[1] JNCASR, New Chem Unit, Jakkur PO, Bangalore 560064, Karnataka, India
[2] JNCASR, Theoret Sci Unit, Jakkur PO, Bangalore 560064, Karnataka, India
[3] Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
[4] JNCASR, Sch Adv Mat, Jakkur PO, Bangalore 560064, Karnataka, India
关键词
SOFT TO-PHONON; RAMAN-SCATTERING; PHASE-TRANSITION; SNTE; FIGURE; MERIT; STABILITY; ORIGIN; INDIUM; LEAD;
D O I
10.1039/c8ee03162b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
High thermoelectric performance of a crystalline solid requires it to have low thermal conductivity which is one of the utmost material challenges. Herein, we demonstrate how the local structural distortions and the associated ferroelectric lattice instability induced soft polar phonons effectively scatter the heat carrying acoustic phonons and help achieve ultralow lattice thermal conductivity in SnTe by engineering the instability near room temperature via Ge (x = 0-30 mol%) alloying. While Sn1-xGexTe possesses a global cubic structure above room temperature (x < 0.5), by analysing synchrotron X-ray pair distribution functions (PDFs) we showed that local rhombohedral distortion exists which is sustained up to the studied maximum temperature (approximate to 600 K) above the ferroelectric transition (T-C = 290 K). We showed that the local rhombohedral distortions in global cubic Sn1-xGexTe are predominantly associated with local Ge off-centering which forms a short-range chain-like structure and scatters acoustic phonons, resulting in an ultralow lattice thermal conductivity of approximate to 0.67 W m(-1) K-1. In addition, Sb doping in Sn1-xGexTe enhances the Seebeck coefficient due to p-type carrier optimization and valence band convergence, which leads to a synergistic boost in the thermoelectric figure of merit, zT, to approximate to 1.6 at 721 K. The concept of engineering ferroelectric instability to achieve ultralow thermal conductivity is applicable to other crystalline solids, which opens up a general opportunity to enhance the thermoelectric performance.
引用
收藏
页码:589 / 595
页数:7
相关论文
共 60 条
[1]   Soft phonon modes driven reduced thermal conductivity in self-compensated Sn1.03Te with Mn doping [J].
Acharya, Somnath ;
Pandey, Juhi ;
Soni, Ajay .
APPLIED PHYSICS LETTERS, 2016, 109 (13)
[2]   Local ferroelectricity in thermoelectric SnTe above room temperature driven by competing phonon instabilities and soft resonant bonding [J].
Aggarwal, Leena ;
Banik, Ananya ;
Anand, Shashwat ;
Waghmare, Umesh V. ;
Biswas, Kanishka ;
Sheet, Goutam .
JOURNAL OF MATERIOMICS, 2016, 2 (02) :196-202
[3]   The journey of tin chalcogenides towards high-performance thermoelectrics and topological materials [J].
Banik, Ananya ;
Roychowdhury, Subhajit ;
Biswas, Kanishka .
CHEMICAL COMMUNICATIONS, 2018, 54 (50) :6573-6590
[4]   High Power Factor and Enhanced Thermoelectric Performance of SnTe-AgInTe2: Synergistic Effect of Resonance Level and Valence Band Convergence [J].
Banik, Ananya ;
Shenoy, U. Sandhya ;
Saha, Sujoy ;
Waghmare, Umesh V. ;
Biswas, Kanishka .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2016, 138 (39) :13068-13075
[5]   The origin of low thermal conductivity in Sn1-xSbxTe: phonon scattering via layered intergrowth nanostructures [J].
Banik, Ananya ;
Vishal, Badri ;
Perumal, Suresh ;
Datta, Ranjan ;
Biswas, Kanishka .
ENERGY & ENVIRONMENTAL SCIENCE, 2016, 9 (06) :2011-2019
[6]   Mg Alloying in SnTe Facilitates Valence Band Convergence and Optimizes Thermoelectric Properties [J].
Banik, Ananya ;
Shenoy, U. Sandhya ;
Anand, Shashwat ;
Waghmare, Umesh V. ;
Biswas, Kanishka .
CHEMISTRY OF MATERIALS, 2015, 27 (02) :581-587
[7]   CONTINUOUS RHOMBOHEDRAL-CUBIC TRANSFORMATION IN GETE-SNTE ALLOYS [J].
BIERLY, JN ;
MULDAWER, L ;
BECKMAN, O .
ACTA METALLURGICA, 1963, 11 (04) :447-&
[8]   High-performance bulk thermoelectrics with all-scale hierarchical architectures [J].
Biswas, Kanishka ;
He, Jiaqing ;
Blum, Ivan D. ;
Wu, Chun-I ;
Hogan, Timothy P. ;
Seidman, David N. ;
Dravid, Vinayak P. ;
Kanatzidis, Mercouri G. .
NATURE, 2012, 489 (7416) :414-418
[9]   SURFACE ELECTRIC-FIELD-INDUCED RAMAN SCATTERING IN PBTE AND SNTE [J].
BRILLSON, L ;
BURSTEIN, E .
PHYSICAL REVIEW LETTERS, 1971, 27 (12) :808-&
[10]   LOWER LIMIT TO THE THERMAL-CONDUCTIVITY OF DISORDERED CRYSTALS [J].
CAHILL, DG ;
WATSON, SK ;
POHL, RO .
PHYSICAL REVIEW B, 1992, 46 (10) :6131-6140