Raman scattering studies of polycrystalline 3C-SiC deposited on SiO2 and AlN thin films

被引:16
作者
Jeong, Junho [1 ]
Jang, Kiwan [1 ]
Lee, Ho Sueb [1 ]
Chung, Gwiy-Sang [2 ]
Kim, Gwi-yeol [2 ]
机构
[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea
[2] Univ Ulsan, Sch Elect Engn, Ulsan 749680, South Korea
关键词
Poly; 3C-SiC; AlN; Raman scattering; HMDS; EPITAXIAL-GROWTH;
D O I
10.1016/j.physb.2008.09.040
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This paper describes the Raman scattering characteristics of the Raman spectra of 0.4- and 2.0-mu m-thick polycrystalline (poly) 3C-SiC on AlN/Si and SiO2/Si by using atmosphere pressure chemical vapor deposition (APCVD) with hexamethyldisilane (HMDS) and carrier gases (Ar+H-2). In the Raman spectra for all growth temperatures, the D and G peaks of nanocrystalline graphite were measured. The C/Si rate of poly 3C-SiC deposited in (Ar+H-2) atmosphere was higher than that in H-2 gas, although HMDS C/Si rate is 3. The biaxial stresses of 2.0-mu m-thick 3C-SiC on SiO2 and AlN, which was deposited at the growth temperature of 1180 degrees C after annealing AlN at 800 and 1100 degrees C, were calculated as 428 and 896 MPa, respectively. Therefore, poly 3C-SiC should admix with nanocrystalline graphite due to the addition of At gas and poly 3C-SiC on SiO2 should be better than on AlN for harsh environmental MEMS applications. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:7 / 10
页数:4
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