Residual resistance in a two-dimensional electron system: A phenomenological approach

被引：18

作者：

Volkov, AF ^{[1
]}

Pavlovskii, VV

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.69.125305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider a simple phenomenological model of a semiconductor with absolute negative conductance in a magnetic field. We find the form of the domains of the electric field and current which arise as a result of an instability of a uniform state. We show that in both Corbino disc and Hall bar samples the residual conductance and resistance are negative and exponentially small; they decrease exponentially with increasing length L-x,L-y.

引用

页数：5

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