Sn-doped CdTe as promising intermediate-band photovoltaic material

被引：21

作者：

Flores, Mauricio A. ^{[1
,2
]}

Menendez-Proupin, Eduardo ^{[3
]}

Orellana, Walter ^{[4
]}

Pena, Juan L. ^{[5
]}

机构：

[1] Pontificia Univ Catolica Valparaiso, Fac Ciencias, Casilla 4950, Valparaiso, Chile

[2] Univ San Sebastian, Fac Ingn & Tecnol, Bellavista 7, Santiago 8420524, Chile

[3] Univ Chile, Fac Ciencias, Dept Fis, Las Palmeras 3425, Santiago 7800003, Chile

[4] Univ Andres Bello, Dept Ciencias Fis, Sazie 2212, Santiago 0370136, Chile

[5] IPN, CINVESTAV, Dept Appl Phys, Apdo Postal 73, Merida 97310, Yucatan, Mexico

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 03期

关键词：

CdTe; photovoltaics; intermediate-band; solar cells; V-SUBSTITUTED IN2S3; SOLAR-CELLS; ENERGY-CONVERSION; SEMICONDUCTORS; EFFICIENCY; VACANCY; CHALCOPYRITE; CIRCUIT; GAPS;

D O I：

10.1088/1361-6463/50/3/035501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation energies, charge transition levels and quasiparticle defect states of several tin-related impurities are investigated within the DFT + GW formalism. The optical spectrum obtained from the solution of the Bethe-Salpeter equation shows that the absorption strongly increases in the sub-bandgap region after doping, suggesting a two-step photoexcitation process that facilitates transitions from photons with insufficient energy to cause direct transitions from the valence to the conduction band via an intermediate-band. We propose Sn-doped CdTe as a promising candidate for the development of high-efficiency solar cells, which could potentially overcome the Shockley-Queisser limit.

引用

页数：8

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