Crystal structure and band-edge transitions of ReS2-xSex layered compounds

被引：78
作者：
Ho, CH
Huang, YS [1 ]
Liao, PC
Tiong, KK
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Kuang Wu Inst Technol & Commerce, Dept Elect Engn, Taipei 112, Taiwan
[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 202, Taiwan
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1999年 / 60卷 / 11期
关键词：
semiconductors; crystal structure; optical properties; light absorption and reflection;
D O I：
10.1016/S0022-3697(99)00201-2
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Single crystals of the ReS2-xSex solid solution series have been grown by the chemical vapor transport method using Br-2 as a transport agent. From analyzing the X-ray patterns, the series crystals are determined to be single-phase and crystallized in the triclinic layered structure. The lattice parameters of the compound series are evaluated and discussed. The optical absorption edge was measured on basal-plane at room temperature. The results reveal that ReS2-xSex are indirect semiconductors and their energy gaps are determined. The band gap energy varies smoothly with the Se composition x, indicating that the nature of band edges are similar for the end members ReS2 and ReSe2, and the compounds of intermediate compositions. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码：1797 / 1804
页数：8
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