High Schottky barrier at grain boundaries observed in Na1/2Sm1/2Cu3Ti4O12 ceramics

被引：30
作者：
Somphan, Weeraya [1 ]
Thongbai, Prasit [2 ,3 ]
Yamwong, Teerapon [4 ]
Maensiri, Santi [5 ]
机构：
[1] Khon Kaen Univ, Mat Sci & Nanotechnol Program, Fac Sci, Khon Kaen 40002, Thailand
[2] Khon Kaen Univ, Dept Phys, Fac Sci, Khon Kaen 40002, Thailand
[3] Khon Kaen Univ, Integrated Nanotechnol Res Ctr INRC, Khon Kaen 40002, Thailand
[4] Natl Met & Mat Technol Ctr MTEC, Pathum Thani 12120, Thailand
[5] Suranaree Univ, Sch Phys, Inst Sci, Nakhon Ratchasima 30000, Thailand
来源：
MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 10期
关键词：
Ceramics; Impedance spectroscopy; Photoelectron spectroscopy; Dielectric properties; Electrical properties; GIANT DIELECTRIC-CONSTANT; CACU3TI4O12; CERAMICS; ELECTRICAL-PROPERTIES; POTENTIAL BARRIER; ACU(3)TI(4)O(12); PERMITTIVITY;
D O I：
10.1016/j.materresbull.2013.06.028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dielectric properties and nonlinear current-voltage characteristics of Na1/2Sm1/2Cu3Ti4O12 ceramics prepared by a conventional solid state reaction method were investigated. Na1/2Sm1/2Cu3Ti4O12 ceramics exhibited a high dielectric permittivity of 7.0-8.4 x 10(3) and low loss tangent (tan delta similar to 0.030-0.041). Non-Ohmic properties with a high breakdown voltage of similar to 2208 V cm(-1) and large nonlinear coefficient of 15.6 were observed in Na1/2Sm1/2Cu3Ti4O12 ceramics. Using complex impedance analysis, Na1/2Sm1/2Cu3Ti4O12 ceramics were shown to be electrically heterogeneous consisting of semiconducting grains and insulating grain boundaries. Giant dielectric properties were described based on the electrically heterogeneous microstructure. X-ray photoelectron spectroscopy analysis suggested that the semiconductive nature of grains may be related to the presence of Cu+ and Ti3+. The formation of an electrostatic potential barrier at the grain boundaries of Na1/2Sm1/2Cu3Ti4O12 ceramics was suggested to be caused by the Schottky effect. Interestingly, high electrostatic potential barriers at grain boundaries in Na1/2Sm1/2Cu3Ti4O12 ceramics were calculated and found to be 0.925-0.964 eV. (c) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：4087 / 4092
页数：6
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