A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

被引：1

作者：

Linnarsson, M. K. ^{[1
]}

Isberg, J. ^{[2
]}

Schoener, A. ^{[3
]}

Hallen, A. ^{[1
]}

机构：

[1] Royal Inst Technol, Lab Mat & Semicond Phys, POB Electrum 229, SE-16440 Kista, Sweden

[2] Uppsala Univ, Dept Engn Sci, Uppsala SE-75121, Sweden

[3] Acreo AB, Kista SE-16440, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Boron; SIMS; Diffusion; 4H-SiC; Diamond;

D O I：

10.4028/www.scientific.net/MSF.600-603.453

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, B-11-ions to a dose of 2 x 10(14) cm(-2) has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 degrees C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

引用

页码：453 / +

页数：2

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