Synthesis of BiVO4/WO3 composite film for highly efficient visible light induced photoelectrocatalytic oxidation of norfloxacin

被引:50
作者
Du, Hao [1 ]
Pu, Wenhong [1 ]
Wang, Yunyang [1 ]
Yan, Kai [2 ]
Feng, Jun [2 ]
Zhang, Jingdong [2 ]
Yang, Changzhu [1 ]
Gong, Jianyu [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Environm Sci & Engn, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Chem & Chem Engn, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
BiVO4/WO3 composite film; Norfloxacin; Photoelectrocatalytic oxidation; SILAR; CHARGE SEPARATION; QUANTUM DOTS; PHOTOCATALYTIC ACTIVITY; REACTION-KINETICS; WATER; DEGRADATION; PHOTOANODE; ANTIBIOTICS; ADSORPTION; NANORODS;
D O I
10.1016/j.jallcom.2019.01.390
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, we synthesized BiVO4/WO3 composite film via a hydrothermal method and successive ionic layer adsorption and reaction (SILAR) for photoelectrocatalytic (PEC) degradation of norfloxacin (NOR) under visible light irradiation (lambda > 420 nm). The BiVO4/WO3 composite film was characterized by various techniques in details. These results suggested that BiVO4 was successfully assembled onto the WO3 film surface. The BiVO4/WO3 composite film exhibited enhanced PEC performance and the apparent rate constant for degradation of NOR was estimated to be 2.68-10(-3) min(-1), which was 3.52 and 2.39 times higher than that of WO3 and BiVO4 film, respectively. The superior PEC performance could be ascribed to the formation of n-n junction facilitating the interfacial charge transfer and separation rate, resulting in the enhanced light-harvesting capability. The generated h(+), O-center dot(2)- and (OH)-O-center dot radicals were responsible for the PEC degradation of NOR confirmed by the radicals trapping experiments and ESR spin-trap technique. Analysis of the degradation intermediates implied that the piperazine ring of the norfloxacin was mainly attacked during the visible-light-driven degradation process. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:284 / 294
页数:11
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