Temperature-Dependent Charge Transport in Al/Al Nanocrystal Embedded Al2O3 Nanocomposite/p-Si Diodes

被引：11

作者：

Liu, Z. ^{[1
]}

Chen, T. P. ^{[1
]}

Liu, Y. ^{[2
]}

Yang, M. ^{[1
]}

Wong, J. I. ^{[1
]}

Cen, Z. H. ^{[1
]}

Zhang, S. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

来源：

ECS SOLID STATE LETTERS | 2012年 / 1卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

HIGH-K DIELECTRICS; LIMITED CURRENTS; THIN-FILMS; CONDUCTION; LAYER;

D O I：

10.1149/2.006201ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al nanocrystal/Al2O3 nanocomposite thin films have been synthesized to form metal-insulator-semiconductor (MIS) diodes. The current transport in the diode, which is important to the diode memory application, has been studied with current-voltage measurements at various temperatures. Under a positive (reverse) bias, the diode exhibits a strong temperature-dependence in the current conduction, which is governed or dominated by ohmic conduction and Schottky emission at low and high electric field, respectively. However, under a negative (forward) bias, the current is much larger but less temperature-dependent, and the current transport follows a trap-controlled space-charge-limited conduction process. (C) 2012 The Electrochemical Society. All rights reserved.

引用

页码：Q4 / Q7

页数：4

共 20 条

[1] Temperature dependence of the current conduction mechanisms in LaAlO3 thin films [J].

Chang, Ingram Yin-Ku ;

Lee, Joseph Ya-Min .

APPLIED PHYSICS LETTERS, 2008, 93 (22)

[2]

Hill R.M., 1967, THIS SOLID FILMS, V1

[3] Space-charge-limited currents in La2O3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing [J].

Kim, YS ;

Ohmi, SI ;

Tsutsui, K ;

Iwa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A) :4032-4042

[4]

Lampert M.A., 1970, Current Injection in Solids

[5] Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals [J].

Liu, Y. ;

Chen, T. P. ;

Lau, H. W. ;

Wong, J. I. ;

Ding, L. ;

Zhang, S. ;

Fung, S. .

APPLIED PHYSICS LETTERS, 2006, 89 (12)

[6] Charging effect of Al2O3 thin films containing Al nanocrystals [J].

Liu, Y. ;

Chen, T. P. ;

Zhu, W. ;

Yang, M. ;

Cen, Z. H. ;

Wong, J. I. ;

Li, Y. B. ;

Zhang, S. ;

Chen, X. B. ;

Fung, S. .

APPLIED PHYSICS LETTERS, 2008, 93 (14)

[7] Static dielectric constant of Al nanocrystal/Al2O3 nanocomposite thin films determined by the capacitance-voltage reconstruction technique [J].

Liu, Z. ;

Chen, T. P. ;

Liu, Y. ;

Yang, M. ;

Wong, J. I. ;

Cen, Z. H. .

APPLIED PHYSICS LETTERS, 2010, 96 (17)

[8] Annealing-Induced Changes in Electrical Characteristics of Al/Al-Rich Al2O3/p-Si Diodes [J].

Liu, Zhen ;

Chen, T. P. ;

Liu, Yang ;

Cen, Zhan Hong ;

Zhu, Shu ;

Yang, Ming ;

Wong, Jen It ;

Li, Yi Bin ;

Zhang, Sam .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) :33-38

[9] Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics [J].

Miyazaki, S ;

Miyazaki, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2212-2216

[10] Nonvolatile memory using Al2O3 film with an embedded Al-rich layer -: art. no. 223110 [J].

Nakata, S ;

Saito, K ;

Shimada, M .

APPLIED PHYSICS LETTERS, 2005, 87 (22) :1-3

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