Temperature-Dependent Charge Transport in Al/Al Nanocrystal Embedded Al2O3 Nanocomposite/p-Si Diodes

被引：11
作者：
Liu, Z. [1 ]
Chen, T. P. [1 ]
Liu, Y. [2 ]
Yang, M. [1 ]
Wong, J. I. [1 ]
Cen, Z. H. [1 ]
Zhang, S. [3 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
来源：
ECS SOLID STATE LETTERS | 2012年 / 1卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
HIGH-K DIELECTRICS; LIMITED CURRENTS; THIN-FILMS; CONDUCTION; LAYER;
D O I：
10.1149/2.006201ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al nanocrystal/Al2O3 nanocomposite thin films have been synthesized to form metal-insulator-semiconductor (MIS) diodes. The current transport in the diode, which is important to the diode memory application, has been studied with current-voltage measurements at various temperatures. Under a positive (reverse) bias, the diode exhibits a strong temperature-dependence in the current conduction, which is governed or dominated by ohmic conduction and Schottky emission at low and high electric field, respectively. However, under a negative (forward) bias, the current is much larger but less temperature-dependent, and the current transport follows a trap-controlled space-charge-limited conduction process. (C) 2012 The Electrochemical Society. All rights reserved.
引用
收藏
页码：Q4 / Q7
页数：4
相关论文
共 20 条
  • [1] Temperature dependence of the current conduction mechanisms in LaAlO3 thin films
    Chang, Ingram Yin-Ku
    Lee, Joseph Ya-Min
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (22)
  • [2] Hill R.M., 1967, THIS SOLID FILMS, V1
  • [3] Space-charge-limited currents in La2O3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing
    Kim, YS
    Ohmi, SI
    Tsutsui, K
    Iwa, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 4032 - 4042
  • [4] Lampert M.A., 1970, Current Injection in Solids
  • [5] Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals
    Liu, Y.
    Chen, T. P.
    Lau, H. W.
    Wong, J. I.
    Ding, L.
    Zhang, S.
    Fung, S.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (12)
  • [6] Charging effect of Al2O3 thin films containing Al nanocrystals
    Liu, Y.
    Chen, T. P.
    Zhu, W.
    Yang, M.
    Cen, Z. H.
    Wong, J. I.
    Li, Y. B.
    Zhang, S.
    Chen, X. B.
    Fung, S.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (14)
  • [7] Static dielectric constant of Al nanocrystal/Al2O3 nanocomposite thin films determined by the capacitance-voltage reconstruction technique
    Liu, Z.
    Chen, T. P.
    Liu, Y.
    Yang, M.
    Wong, J. I.
    Cen, Z. H.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (17)
  • [8] Annealing-Induced Changes in Electrical Characteristics of Al/Al-Rich Al2O3/p-Si Diodes
    Liu, Zhen
    Chen, T. P.
    Liu, Yang
    Cen, Zhan Hong
    Zhu, Shu
    Yang, Ming
    Wong, Jen It
    Li, Yi Bin
    Zhang, Sam
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 33 - 38
  • [9] Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics
    Miyazaki, S
    Miyazaki, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2212 - 2216
  • [10] Nonvolatile memory using Al2O3 film with an embedded Al-rich layer -: art. no. 223110
    Nakata, S
    Saito, K
    Shimada, M
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (22) : 1 - 3
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