Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

被引：261

作者：

Geisz, J. F. ^{[1
]}

Steiner, M. A. ^{[1
]}

Garcia, I. ^{[1
,2
]}

Kurtz, S. R. ^{[1
]}

Friedman, D. J. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期

关键词：

CARRIER GENERATION; RECOMBINATION;

D O I：

10.1063/1.4816837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80-90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816837]

引用

页数：5

共 24 条

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