Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

被引:261
作者
Geisz, J. F. [1 ]
Steiner, M. A. [1 ]
Garcia, I. [1 ,2 ]
Kurtz, S. R. [1 ]
Friedman, D. J. [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain
关键词
CARRIER GENERATION; RECOMBINATION;
D O I
10.1063/1.4816837
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80-90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816837]
引用
收藏
页数:5
相关论文
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