Impurity Sublattice Localization in ZnO Revealed by Li Marker Diffusion

被引：15

作者：

Azarov, A. Yu. ^{[1
]}

Knutsen, K. E. ^{[1
]}

Neuvonen, P. T. ^{[1
,2
]}

Vines, L. ^{[1
]}

Svensson, B. G. ^{[1
]}

Kuznetsov, A. Yu. ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway

[2] Aarhus Univ, Dept Phys & Astron iNANO, DK-8000 Aarhus C, Denmark

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 17期

关键词：

ZINC-OXIDE;

D O I：

10.1103/PhysRevLett.110.175503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Sublattice localization of impurities in compound semiconductors, e.g., ZnO, determines their electronic and optical action. Despite that the impurity position may be envisaged based on charge considerations, the actual localization is often unknown, limiting our understanding of the incorporation and possible doping mechanisms. In this study, we demonstrate that the preferential sublattice occupation for a number of impurities in ZnO can be revealed by monitoring Li diffusion. In particular, using ion implantation, the impurity incorporation into the Zn sublattice (holds for, B, Mg, P, Ag, Cd, and Sb) manifests in the formation of Li-depleted regions behind the implanted one, while Li pileups in the region of the implantation peaks for impurities residing on O sites, e.g., N. The behavior appears to be of general validity and the phenomena are explained in terms of the apparent surplus of Zn and O interstitials, related to the lattice localization of the impurities. Furthermore, Cd + O and Mg + O co-doping experiments revealed that implanted O atoms act as an efficient blocking "filter'' for fast diffusing Zn interstitials. DOI: 10.1103/PhysRevLett.110.175503

引用

页数：5

共 27 条

[1]

AMSEL G, 1984, ANNU REV NUCL PART S, V34, P435

[2] Annealing of ion implanted CdZnO [J].

Azarov, A. Yu ;

Hallen, A. ;

Svensson, B. G. ;

Kuznetsov, A. Yu .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (23)

[3] On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide -: art. no. 112112 [J].

Barnes, TM ;

Olson, K ;

Wolden, CA .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[4] Annealing study of hydrothermally grown ZnO wafers [J].

Borseth, T. M. ;

Svensson, B. G. ;

Kuznetsov, A. Yu .

PHYSICA SCRIPTA, 2006, T126 :10-14

[5] Vacancy clustering and acceptor activation in nitrogen-implanted ZnO [J].

Borseth, Thomas Moe ;

Tuomisto, Filip ;

Christensen, Jens S. ;

Monakhov, Edouard V. ;

Svensson, Bengt G. ;

Kuznetsov, Andrej Yu. .

PHYSICAL REVIEW B, 2008, 77 (04)

[6] Annealing study of Sb+ and Al+ ion-implanted ZnO [J].

Borseth, TM ;

Christensen, JS ;

Maknys, K ;

Hallén, A ;

Svensson, BG ;

Kuznetsov, AY .

SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (4-6) :464-471

[7] p type doping of zinc oxide by arsenic ion implantation -: art. no. 192103 [J].

Braunstein, G ;

Muraviev, A ;

Saxena, H ;

Dhere, N ;

Richter, V ;

Kalish, R .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[8] A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion [J].

Carvalho, A. ;

Alkauskas, A. ;

Pasquarello, Alfredo ;

Tagantsev, A. K. ;

Setter, N. .

PHYSICAL REVIEW B, 2009, 80 (19)

[9] p-type doping and codoping of ZnO based on nitrogen is ineffective: An ab initio clue [J].

Cui, Ying ;

Bruneval, Fabien .

APPLIED PHYSICS LETTERS, 2010, 97 (04)

[10]

Feldman L.C., 1982, MAT ANAL ION CHANNEL

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