An improved TB method for the AlGaN/GaN superlattice

The tradition energy dispersion model can not match the experiment results of the AlGaN/GaN superlattice with strong polarization effect. Thus we propose a new dispersion model from the improved tight binding method. In this model, the couple of wavefunctions from more potential wells are considered. To a AlGaN/GaN superlattice with 1.5nm well length, 1nm barrier length and 25% Al content, the calculation result shows that the improved model are much more precise than the tradition model. This improved dispersion model can be used in the study of the nonlinear transport of AlGaN/GaN superlattice.