980 nm high power semiconductor lasers

被引：0
|
作者：
Gao, X [1 ]
Qu, Y [1 ]
Li, H [1 ]
Bo, BX [1 ]
机构：
[1] Changchun Inst Opt & Fine Mech, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
来源：
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS | 2001年 / 4580卷
关键词：
high power; multiple quantum well; semiconductor laser;
D O I：
10.1117/12.445006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report a 980 nm InGaAs/GaAs MQW semidconductor laser array. The epilayer structures are gown by MBE. We have fabricated broad areas lasers with a cavity length of 1000mum and a stripe width of 60mum and a stripe spacing of 100mum. The measurements are performed in quasi-continuous wave mode (QCW). The highest QCW output power of 12W for laser array with coated facets is achieved. The threshold current density is 400 A/cm(2) at 15degreesC. The slope efficiency is 0.74W/A. The lasing spectrum is peaked at 979.4 rim with a FWHM of 3nm.
引用
收藏
页码：516 / 518
页数：3
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