Long-Range Rhombohedral-Stacked Graphene through Shear

被引:21
|
作者
Nery, Jean Paul [1 ,2 ]
Calandra, Matteo [3 ,4 ]
Mauri, Francesco [1 ,2 ]
机构
[1] Fdn Ist Italiaizo Tecnol, Graphene Labs, I-16163 Genoa, Italy
[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[3] Sorbonne Univ, CNRS, Inst Nanosci Paris, UMR7588, F-75252 Paris, France
[4] Univ Trento, Dept Phys, I-38123 Povo, Italy
基金
美国国家科学基金会;
关键词
graphene; rhombohedral; long-range ABC order; shear stress; Bernal; density functional theory; friction; ELECTRIC-FIELD; PHASE; ORDER; VAN;
D O I
10.1021/acs.nanolett.0c01146
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The discovery of superconductivity and correlated electronic states in the flat bands of twisted bilayer graphene has raised a lot of excitement. Flat bands also occur in multilayer graphene flakes that present rhombohedral (ABC) stacking order on many consecutive layers. Although Bernal-stacked (AB) graphene is more stable, long-range ABC-ordered flakes involving up to 50 layers have been surprisingly observed in natural samples. Here, we present a microscopic atomistic model, based on first-principles density functional theory calculations, that demonstrates how shear stress can produce long-range ABC order. A stress-angle phase diagram shows under which conditions ABC-stacked graphene can be obtained, providing an experimental guide for its synthesis.
引用
收藏
页码:5017 / 5023
页数:7
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