Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates

被引：28

作者：

Pham, A. T. ^{[1
]}

Jungemann, C. ^{[2
]}

Meinerzhagen, B. ^{[1
]}

机构：

[1] BST TU Braunschweig, D-38023 Braunschweig, Germany

[2] Bundeswehr Univ, EIT4, D-85577 Neubiberg, Germany

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 09期

关键词：

mobility modeling; surface/channel orientation; uniaxial stress; PMOS;

D O I：

10.1016/j.sse.2008.04.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hole inversion layer mobility of in-plane uniaxially stressed Si is modeled by a microscopic approach. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6 x 6 (k) over right arrow . (p) over right arrow Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and Surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of relaxed Si on (0 0 1) Si wafers. The calibrated model reproduces available channel mobility measurements for unstrained and uniaxially stressed Si on (0 0 1), (1 1 1) and (1 1 0) Substrates. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1437 / 1442

页数：6

共 15 条

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