Characterization of triangular-defects in 4°off 4H-SiC epitaxial wafers by synchrotron X-ray topography and by transmission electron microscopy

被引：11

作者：

Yamashita, T. ^{[1
]}

Momose, K. ^{[1
]}

Muto, D. ^{[1
]}

Shimodaira, Y. ^{[1
]}

Yamatake, K. ^{[1
]}

Miyasaka, Y. ^{[1
]}

Sato, T. ^{[1
]}

Matsuhata, H. ^{[1
]}

Kitabatake, M. ^{[1
]}

机构：

[1] R&D Partnership Future Power Elect Technol FUPET, Minato Ku, Tokyo 1050001, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Silicon carbide (SiC); triangular-defect; dislocation; synchrotron X-ray topography; transmission electron microscopy (TEM); CRYSTALLOGRAPHIC DEFECTS; FAULTS;

D O I：

10.4028/www.scientific.net/MSF.717-720.363

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated origins and structures of triangular-shaped defects formed on surfaces of 4-degrees-off 4H-SiC epitaxial wafers. It is well known that some of the triangular-shaped defects are originated by 3C-SiC particles so called "downfalls", but major origins of the defects have been unknown until now. Our TEM observations show that not only anomalous grain formations of SiC in epitaxial films, but also contaminations by foreign materials can be the origins of the defects. Several different types of structure for the isosceles triangular-shaped defects investigated by synchrotron X-ray topography experiments are also reported. It is discussed that there exist different types of Burgers vectors configurations at the interface between epitaxial films and triangular defects.

引用

页码：363 / 366

页数：4

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