Probing the influence from residual Ti interstitials on water adsorption on TiO2(110)

被引:27
作者
Walle, L. E. [2 ]
Borg, A. [2 ]
Uvdal, P. [3 ,4 ]
Sandell, A. [1 ]
机构
[1] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden
[2] Norwegian Univ Sci & Technol NTNU, Dept Phys, NO-7491 Trondheim, Norway
[3] Lund Univ, Dept Chem, SE-22100 Lund, Sweden
[4] Lund Univ, MAX Lab 4, SE-22100 Lund, Sweden
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 20期
关键词
RUTILE TIO2(110); PHOTOELECTRON-SPECTROSCOPY; SURFACE-CHEMISTRY; DISSOCIATION; TITANIA; DEFECTS; SCIENCE; SITES; O-2;
D O I
10.1103/PhysRevB.86.205415
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Reduced, stoichiometric and oxidized TiO2(110) surfaces have been compared using valence photoelectron spectroscopy. The results show that the intensity from the band-gap state carries contributions from both oxygen surface vacancies and residual Ti interstitials, present after the sample cleaning procedure. The density of Ti interstitials was found to be 0.05 +/- 0.02 monlayers (ML), while the density of oxygen vacancies was estimated to 0.09 +/- 0.01 ML. Both these values are in good agreement with previous STM studies. O 1s core-level photoelectron spectra show that oxidation of the interstitials had negligible effect on the OH-H2O balance within the first water layer. The characteristic OH-H2O balance found on a surface free from oxygen vacancies previously reported [Walle et al., Phys. Rev. B 80, 235436 (2009)] is therefore an inherent property of the TiO2(110) surface; that is, the primary mechanism leading to partial dissociation is not related to the presence of residual Ti interstitials.
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页数:4
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